NSBC114YDXV6T1

NSBC114EDXV6T1, NSBC114EDXV6T5
http://onsemi.com
7
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC144EDXV6T1
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 12. V
CE(sat)
versus I
C
0246810
100
10
1
0.1
0.01
0.001
V
in
, INPUT VOLTAGE (VOLTS)
T
A
=−25°C
75°C
25°C
Figure 13. DC Current Gain
Figure 14. Output Capacitance
100
10
1
0.1
010 203040 50
I
C
, COLLECTOR CURRENT (mA)
Figure 15. Output Current versus Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
25°C
−25°C
100
10
1 100
25°C
75°C
50
010203040
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
Figure 16. Input Voltage versus Output Current
0
20 40
50
10
1
0.1
0.01
I
C
, COLLECTOR CURRENT (mA)
25°C
75°C
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLT
S
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
T
A
=−25°C
T
A
=−25°C
NSBC114EDXV6T1, NSBC114EDXV6T5
http://onsemi.com
8
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114YDXV6T1
10
1
0.1
01020304050
100
10
1
0246810
4
3.5
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 1520 2530 3540 4550
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 17. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
020406080
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS
)
Figure 18. DC Current Gain
1 10 100
I
C
, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
Figure 21. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
−25°C
25°C
T
A
=75°C
V
CE
= 10
300
250
200
150
100
50
0
2468 1520405060708090
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
25°C
I
C
/I
B
= 10
T
A
=−25°C
T
A
=75°C
25°C
−25°C
V
O
= 0.2 V
T
A
=−25°C
75°C
V
O
= 5 V
25°C
75°C
NSBC114EDXV6T1, NSBC114EDXV6T5
http://onsemi.com
9
PACKAGE DIMENSIONS
H
E
DIM MIN NOM MAX
MILLIMETERS
A 0.50 0.55 0.60
b 0.17 0.22 0.27
C
D 1.50 1.60 1.70
E 1.10 1.20 1.30
e 0.5 BSC
L 0.10 0.20 0.30
1.50 1.60 1.70
0.020 0.021 0.023
0.007 0.009 0.011
0.059 0.062 0.066
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN NOM MAX
INCHES
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
e
M
0.08 (0.003) X
b 6 5 PL
A
C
−X−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
E
Y
12 3
45
L
6
1.35
0.0531
0.5
0.0197
ǒ
mm
inches
Ǔ
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
E
0.08 0.12 0.18 0.003 0.005 0.007
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NSBC114EDXV6/D
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NSBC114YDXV6T1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
Lifecycle:
New from this manufacturer.
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