www.irf.com 1
05/23/07
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
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Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.32mH, R
G
= 25Ω, I
AS
=15A.
Notes:
Absolute Maximum Ratin
s
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
Max.
15
106
150
±20
40
19
36
15
0 10203040
Q
G
Total Gate Charge (nC)
0
1
2
3
4
5
6
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 32V
VDS= 20V
I
D
= 15A
Description
The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve low
combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6616 is ideal for secondary side synchronous rectification applications up to 100W, and can also be
used in some non-isolated synchronous buck applications where 30V devices do not provide enough voltage headroom.
SQ SX ST MQ
MX
MT MP
l RoHS compliant containing no lead or bormide
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l Lead-Free
2.0 4.0 6.0 8.0 10.0
V
GS
, Gate-to-Source Voltage (V)
0
2.0
4.0
6.0
8.0
10
12
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
T
J
= 25°C
T
J
= 125°C
I
D
= 19A
IRF6616PbF
IRF6616TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
V
DSS
V
GS
R
DS(on)
R
DS(on)
40V max ±20V max
3.7mΩ@ 10V 4.6mΩ@ 4.5V
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
29nC 9.4nC 2.4nC 33nC 15nC 1.8V
DirectFET ISOMETRIC
MX
PD - 96100
