IRF6616TRPBF

Mfr. #:: IRF6616TRPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs
Lifecycle:: New from this manufacturer.
Datasheet:: IRF6616TRPBF Datasheet
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HTML Datasheet:: IRF6616TRPBF Datasheet IRF6616TRPBF Datasheet (P4-P6)IRF6616TRPBF Datasheet (P7-P9)IRF6616TRPBF Datasheet (P10)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: DirectFET-MX

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 19 A

Rds On - Drain-Source Resistance:: 4.6 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 29 nC

Pd - Power Dissipation:: 89 W

Configuration:: Single

Tradename:: DirectFET

Packaging:: Reel

Height:: 0.7 mm

Length:: 6.35 mm

Transistor Type:: 1 N-Channel

Width:: 5.05 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 4800

Subcategory:: MOSFETs

Part # Aliases:: SP001525524

Tags: IRF6616T, IRF6616, IRF661, IRF66, IRF6, IRF

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6616TRPBF Description

*** Source Electronics: Trans MOSFET N-CH Si 40V 19A 7-Pin Direct-FET MX T/R / MOSFET N-CH 40V 19A DIRECTFET

***ure Electronics: Single N-Channel 40 V 5 mOhm 29 nC HEXFET® Power Mosfet - DirectFET®

***nell: MOSFET, N-CH, 40V, 106A, DIRECTFET MX-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 106A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MX; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15A; Package/Case:DirectFET MX; Power Dissipation, Pd:89W; Continuous Drain Current - 25 Deg C:19A; Drain Source On Resistance @ 10V:5mohm ;RoHS Compliant: Yes

***ernational Rectifier: A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number

***(Formerly Allied Electronics): MOSFET, N Ch., 30V, 94A, 6 MOHM, 22 NC QG, D-PAK, Pb-Free

***SIT Distribution GmbH: Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N, 30V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:89mW; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:8113; Current Id Max:94A; Package / Case:DPAK; Power Dissipation Pd:89mW; Pulse Current Idm:380A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.25V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 40 V 2.4 mOhm 92 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free PQFN 5x6mm package, PG-TDSON-8, RoHS

***(Formerly Allied Electronics): MOSFET, 40V, 85A, 2.4 mOhm, 92 nC Qg, PQFN56 | Infineon IRFH7440TRPBF

*** Source Electronics: Trans MOSFET N-CH Si 40V 159A 8-Pin QFN EP T/R / MOSFET N-CH 40V 85A 8PQFN

***roFlash: Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***Yang: Trans MOSFET N-CH 40V 85A 8-Pin PQFN T/R 4k - Tape and Reel

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 104 W

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull

***nell: MOSFET, N-CH, 40V, 85A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***ure Electronics: Single N-Channel 40 V 3.3 mOhm 65 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ark: T&R / MOSFET, 40V, 85A, 3.3 mOhm, 65 nC Qg, PQFN56

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free PQFN 5mm x 6mm package, PG-TDSON-8, RoHS

***Yang: Trans MOSFET N-CH 40V 117A 8-Pin PQFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull

***nell: MOSFET, N-CH, 40V, 85A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 117 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 3.3 / Gate-Source Voltage V = 20 / Fall Time ns = 26 / Rise Time ns = 37 / Turn-OFF Delay Time ns = 33 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 78

***-Wing Technology: VISHAY SQJ422EP-T1-GE3MOSFET Transistor, N Channel, 75 A, 40 V, 0.0028 ohm, 10 V, 2 V

***ical: Trans MOSFET N-CH 40V 75A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

***ure Electronics: Single N-Channel 40 V 3.4 mOhm 83 W SMT Automotive Power Mosfet - PowerPAK SO-8L

***enic: 40V 74A 83W 3.4m´Î@10V18A 2.5V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS

***nsix Microsemi: Power Field-Effect Transistor, 75A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***et: N-CHANNEL 40-V (D-S) 175C MOSFET

***emi: Power MOSFET 30V 117A 3 mOhm Single N-Channel SO-8FL FETky

***(Formerly Allied Electronics): MOSFET N-Channel 30V 36.7A DFN5 | ON Semiconductor NTMFS4898NFT3G

***p One Stop: Trans MOSFET N-CH 30V 36.7A 5-Pin(4+Tab) SO-FL T/R

***ponent Stockers USA: 13.2 A 30 V 0.0048 ohm N-CHANNEL Si POWER MOSFET

***nell: MOSFET,N CH,W DIODE,30V,13.2A,SO8 FL;

***r Electronics: Power Field-Effect Transistor, 13.2A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***or: MOSFET N-CH 30V 13.2A/117A 5DFN

***ark: MOSFET,N CH,W DIODE,30V,13.2A,SO8 FL; Transistor Polarity:N Channel; Continuous Drain Current Id:117A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:73.5W ;RoHS Compliant: Yes

***ark: Mosfet Transistor, N Channel, 25 A, 30 V, 0.004 Ohm, 10 V, 1.8 V Rohs Compliant: Yes

***roFlash: N CH POWER MOSFET, HEXFET, 30V, 86A, DPAK; Transistor Polarity: N Channel; Contin

***ure Electronics: Single N-Channel 30 V 5.8 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA

***(Formerly Allied Electronics): MOSFET, 30V, 85A, 5.8 MOHM, 15 NC QG, LOGIC LEVEL, D-PAK | Infineon IRLR8726TRLPBF

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***nsix Microsemi: Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free; RoHS compliant

***nell: MOSFET, N-CH 30V 86A DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 86A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dis

Market price

Part #	Mfg.	Description	Stock	Price
IRF6616TRPBF DISTI # V72:2272_13890600	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 19A 7-Pin Direct-FET MX T/R RoHS: Compliant	4800	3000:$0.8706 1000:$0.9043 500:$1.0749 250:$1.2111 100:$1.2242 25:$1.4784 10:$1.4958 1:$1.7165
IRF6616TRPBF DISTI # IRF6616TRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 40V 19A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11588In Stock	1000:$1.1204 500:$1.3522 100:$1.7386 10:$2.1640 1:$2.4000
IRF6616TRPBF DISTI # IRF6616TRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 19A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11588In Stock	1000:$1.1204 500:$1.3522 100:$1.7386 10:$2.1640 1:$2.4000
IRF6616TRPBF DISTI # IRF6616TRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 40V 19A DIRECTFET RoHS: Compliant Min Qty: 4800 Container: Tape & Reel (TR)	9600In Stock	4800:$0.9753
IRF6616TRPBF DISTI # 30702474	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 19A 7-Pin Direct-FET MX T/R RoHS: Compliant	14400	4800:$0.8304
IRF6616TRPBF DISTI # 29553532	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 19A 7-Pin Direct-FET MX T/R RoHS: Compliant	4800	3000:$0.8627 1000:$0.9031 500:$1.0733 250:$1.2092 100:$1.2223 25:$1.4756 10:$1.4929 7:$1.7129
IRF6616TRPBF DISTI # IRF6616TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 19A 7-Pin Direct-FET MX T/R - Tape and Reel (Alt: IRF6616TRPBF) RoHS: Compliant Min Qty: 4800 Container: Reel	Americas - 4800	4800:$0.9549 9600:$0.9529 19200:$0.9499 28800:$0.9479 48000:$0.9459
IRF6616TRPBF DISTI # 91Y4735	Infineon Technologies AG	MOSFET, N-CH, 40V, 106A, DIRECTFET MX-7,Transistor Polarity:N Channel,Continuous Drain Current Id:106A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power RoHS Compliant: Yes	4379	1:$2.0100 10:$1.7100 25:$1.6000 50:$1.4800 100:$1.3700 250:$1.2900 500:$1.2000 1000:$0.9890
IRF6616TRPBF DISTI # 70019561	Infineon Technologies AG	MOSFET,40V,106A,5.0 MOHM,29 NC QG,MED CAN RoHS: Compliant	0	4800:$1.2780 9600:$1.2520 24000:$1.2140
IRF6616TRPBF DISTI # 942-IRF6616TRPBF	Infineon Technologies AG	MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs RoHS: Compliant	10597	1:$2.0100 10:$1.7100 100:$1.3700 500:$1.2000 1000:$0.9890 2500:$0.9210 4800:$0.8870
IRF6616TRPBF	Infineon Technologies AG	Single N-Channel 40 V 5 mOhm 29 nC HEXFET Power Mosfet - DirectFET RoHS: Compliant	4800Reel	4800:$1.0500
IRF6616TRPBF DISTI # 2579978	Infineon Technologies AG	MOSFET, N-CH, 40V, 106A, DIRECTFET MX-7 RoHS: Compliant	4469	5:£1.4100 25:£1.3000 100:£1.0400 250:£0.9790 500:£0.9170
IRF6616TRPBF DISTI # 2579978	Infineon Technologies AG	MOSFET, N-CH, 40V, 106A, DIRECTFET MX-7 RoHS: Compliant	4379	1:$3.1900 10:$2.7100 100:$2.1700
IRF6616TRPBF DISTI # C1S322000596418	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 19A 7-Pin Direct-FET MX T/R RoHS: Compliant	14400	4800:$1.0400
IRF6616TRPBF DISTI # C1S322000481709	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 19A 7-Pin Direct-FET MX T/R RoHS: Compliant	4800	250:$1.2092 100:$1.2223 25:$1.4756 10:$1.4929

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IRF6616TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes