IRF6616

IRF6616TR1PBF vs IRF6616TR1 vs IRF6616

 
PartNumberIRF6616TR1PBFIRF6616TR1IRF6616
DescriptionMOSFET MOSFT 40V 106A 5.0mOhm 29nC QgMOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V VgsMOSFET N-CH 30V 19A DIRECTFET
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDirectFET-MXDirectFET-MX-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V100 V-
Id Continuous Drain Current19 A19 A-
Rds On Drain Source Resistance6.2 mOhms5 mOhms-
Vgs Gate Source Voltage20 V30 V-
Qg Gate Charge29 nC--
Pd Power Dissipation89 W2.8 W-
ConfigurationSingleSingle-
PackagingReelReel-
Height0.7 mm0.7 mm-
Length6.35 mm6.35 mm-
Transistor Type1 N-Channel1 N-Channel-
Width5.05 mm5.05 mm-
BrandInfineon / IRInfineon / IR-
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001526896SP001530686-
Minimum Operating Temperature-- 40 C-
Maximum Operating Temperature-+ 150 C-
Channel Mode-Enhancement-
Type-DirectFet Power MOSFET-
Fall Time-4.4 ns-
Rise Time-19 ns-
Typical Turn Off Delay Time-21 ns-
Typical Turn On Delay Time-15 ns-
Unit Weight-0.017637 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRF6616TRPBF MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs
IRF6616 MOSFET N-CH 30V 19A DIRECTFET
IRF6616TR1PBF MOSFET N-CH 40V 19A DIRECTFET
IRF6616TR1 MOSFET N-CH 30V 19A DIRECTFET
IRF6616TRPBF RF Bipolar Transistors MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs
Infineon / IR
Infineon / IR
IRF6616TR1PBF MOSFET MOSFT 40V 106A 5.0mOhm 29nC Qg
IRF6616TR1 MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs
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