IRF6616T

IRF6616TRPBF vs IRF6616TR1PBF vs IRF6616TR1

 
PartNumberIRF6616TRPBFIRF6616TR1PBFIRF6616TR1
DescriptionMOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V VgsMOSFET MOSFT 40V 106A 5.0mOhm 29nC QgMOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYN
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseDirectFET-MXDirectFET-MXDirectFET-MX
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V100 V
Id Continuous Drain Current19 A19 A19 A
Rds On Drain Source Resistance4.6 mOhms6.2 mOhms5 mOhms
Vgs Gate Source Voltage20 V20 V30 V
Qg Gate Charge29 nC29 nC-
Pd Power Dissipation89 W89 W2.8 W
ConfigurationSingleSingleSingle
TradenameDirectFET--
PackagingReelReelReel
Height0.7 mm0.7 mm0.7 mm
Length6.35 mm6.35 mm6.35 mm
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.05 mm5.05 mm5.05 mm
BrandInfineon TechnologiesInfineon / IRInfineon / IR
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity480010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesSP001525524SP001526896SP001530686
Moisture Sensitive-YesYes
Minimum Operating Temperature--- 40 C
Maximum Operating Temperature--+ 150 C
Channel Mode--Enhancement
Type--DirectFet Power MOSFET
Fall Time--4.4 ns
Rise Time--19 ns
Typical Turn Off Delay Time--21 ns
Typical Turn On Delay Time--15 ns
Unit Weight--0.017637 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRF6616TRPBF MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs
IRF6616TR1PBF MOSFET N-CH 40V 19A DIRECTFET
IRF6616TR1 MOSFET N-CH 30V 19A DIRECTFET
IRF6616TRPBF RF Bipolar Transistors MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs
Infineon / IR
Infineon / IR
IRF6616TR1PBF MOSFET MOSFT 40V 106A 5.0mOhm 29nC Qg
IRF6616TR1 MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs
Top