DNA30E2200PC
V = V
A²s
A²s
A²s
A²s
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.26
R 0.7 K/W
R
min.
30
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
140
P
tot
210 WT = 25°C
C
R K/W
30
2200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions
Unit
1.53
T = 25°C
VJ
150
V
F0
V0.83T = °C
VJ
175
r
F
13.4
mΩ
V1.24T = °C
VJ
I = A
F
V
30
1.63
I = A
F
60
I = A
F
60
threshold voltage
slope resistance
for power loss calculation only
µA
150
V
RRM
V2200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
7
unction capacitance
V = V;700 T = 25°Cf = 1 MHz
R
VJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
370
400
495
480
A
A
A
A
315
340
685
665
2200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
2300
0.25
IXYS reserves the right to change limits, conditions and dimensions.
20130123dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
