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DNA30E2200PC
P1-P3
P4-P5
DNA3
0E2
200
PC
W
c2
A
A1
c
L
E
2x e
L1
D
3
2
1
3.81
(0.
150)
1.78
(0.
07)
2.54 (
0.100)
3.0
5
(0.1
20)
10.92
(0.430)
9.02
(0.
355)
mm (I
nches
)
Recomm
ended min. foot
print
3x b2
E1
2x b
H
D1
Suppli
er
Option
L2
4
m
i
nm
a
x
m
i
nm
a
x
A
4
.0
6
4
.8
3
0
.1
6
0
0
.1
9
0
A1
A2
b
0
.5
1
0
.9
9
0
.0
2
0
0
.0
3
9
b2
1.
14
1.
40
0.
0
45
0.
055
c
0
.4
0
0
.7
4
0
.0
1
6
0
.0
2
9
c2
1.
14
1.
40
0.
045
0.
055
D
8
.3
8
9
.4
0
0
.3
3
0
0
.3
7
0
D1
8.
00
8.
89
0.
315
0.
350
D2
E
9.
65
10.
41
0.
380
0.
410
E1
6
.
22
8.
50
0.
245
0.
335
e
e1
H
1
4
.6
1
15
.8
8
0
.5
7
5
0
.6
2
5
L
1
.7
8
2
.7
9
0
.0
7
0
0
.1
1
0
L1
1.
02
1.
68
0.
04
0
0.
066
W
ty
p
.
0.
02
0.
040
ty
p
.
0.
0008
0.
002
Di
m
.
M
illim
et
er
I
nches
t
yp.
0.
10
t
yp.
0.
004
2.
41
0.
095
0.
098
4.
28
0.
169
Al
l
d
imensi
on
s
c
on
f
or
m
w
it
h
and
/
o
r w
it
hin
J
E
D
EC
s
t
anda
rd
.
2,
54
B
SC
0,
100
BS
C
2.
5
1
3
Outlines
TO-263 (D2Pak)
IXYS reserv
es the right to change limits, condi
tions and dimensions.
20130123d
Data according to IEC 60747and per semiconductor
unless otherwise specified
©
2013
IXYS all rights reserved
DNA3
0E2
200
PC
0.001
0.01
0.1
1
150
200
250
300
23
4
5
6
7
8
9
0
1
1
10
2
10
3
0.5
1
.0
1.5
2.0
0
20
40
60
0
1
02
03
0
0
10
20
30
40
50
1
10
100
1000
10000
0.0
0.2
0.4
0.6
0.8
0
25
50
75
100
125 150
175 200
0
10
20
30
40
I
F
[A]
V
F
[V]
I
FSM
[A]
t[
s
]
I
2
t
[A
2
s]
t[
m
s
]
P
tot
[W]
I
F(A
V)M
T
]
A
[
amb
[°C
]
I
F(AV)M
[A]
T
C
[°C
]
Z
thJC
[K/
W]
Fig.
1
For
war
d c
urr
ent
ve
rsus
voltage drop per diod
e
Fig. 2
Surge overlo
ad current
Fig. 3
I
2
t versus tim
e per diode
Fig. 4
Power di
ssipation vs
. direct ou
tput current & ambien
t temperature
Fig. 5
M
ax. for
ward cur
rent versus
case temperature
Fig. 6 Tran
sient the
rmal impedanc
e juncti
on to case
t[
m
s
]
Constants
for Z
thJ
C
calculation:
iR
thi
(K/W)
t
i
(s)
1
0.03
0
.0003
2
0.072
0.0065
3
0.131
0.027
4
0.367
0.105
50
.
1
0
.
8
0
25
50
75
100
125
1
50
175
200
T
VJ
= 150°C
T
VJ
= 125°C
T
VJ
=
25°C
T
VJ
= 45°
C
50 Hz, 80% V
RRM
T
VJ
=4
5
°
C
V
R
= 0 V
dc =
1
0.5
0.4
0.33
0.17
0.08
R
thKA
=
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
dc =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=1
5
0
°
C
T
VJ
= 150°C
Rectifier
IXYS reserv
es the right to change limits, condi
tions and dimensions.
20130123d
Data according to IEC 60747and per semiconductor
unless otherwise specified
©
2013
IXYS all rights reserved
P1-P3
P4-P5
DNA30E2200PC
Mfr. #:
Buy DNA30E2200PC
Manufacturer:
Littelfuse
Description:
Rectifiers High Voltage Standard Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
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DNA30E2200PC