8
FN6508.4
February 15, 2013
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Revision History
DATE REVISION CHANGE
November 20, 2012 FN6508.4 Added Note 3 to “Ordering Information” on page 1.
Changed HBM from 3kV to 4kV in “Absolute Maximum Ratings” on page 3.
Changed MM from 300V to 250V in “Absolute Maximum Ratings” on page 3
Added Note 5 to “Electrical Specifications” table on page 4.
March 8, 2010 FN6508.3 On page 4, changed the “Maximum Operating Supply Voltage” TYP from ±12.6V to ±13.2V
February 8, 2010 On page 3 in the “Electrical Specifications” table, changed V
OUT
-DIS Max spec from ±300mV to ±800mV
May 29, 2009 Added Revision History beginning from rev 3.
Changed the logic high level (VIH) on page 3 from Min 2.0V to Min 2.2V, which is consistent with the intended
applications (AFE output logic high levels are typically at 3.3V with 2.4V minimum) while providing added margin
to internal threshold variation.
On page 1 in the first paragraph, changed: "This device features a high drive capability of 400mA while
consuming only 3mA..." to "This device features a high drive capability of 400mA while consuming only 4mA...".
Added Theta JA and applicable note to “Thermal Information” on page 3.
Removed VS, Supply Voltage row in spec table. Added Maximum and Minimum Operating Supply Voltages
(V
S(MAX)
and V
S(MIN)
) with typical specs of ±12.6V and ±7.5V to “SUPPLY CHARACTERISTICS” on page 4.
Added “DISAB = DISCD = 0” to “Electrical Specifications” table common conditions.
