IPA90R500C3
CoolMOS
™
Power Transistor
Features
• Lowest figure-of-merit R
ON
x Q
g
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Maximum ratings, at T
J
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
2)
I
D
T
C
=25 °C
A
T
C
=100 °C
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
Avalanche energy, single pulse
E
AS
I
D
=2.2 A, V
DD
=50 V
388 mJ
Avalanche energy, repetitive t
AR
3),4)
E
AR
I
D
=2.2 A, V
DD
=50 V
Avalanche current, repetitive t
AR
3),4)
I
AR
A
MOSFET dv /dt ruggedness dv /dt
V
DS
=0...400 V
V/ns
Gate source voltage
V
GS
static V
AC (f>1 Hz)
Power dissipation
P
tot
T
C
=25 °C
W
Operating and storage temperature
T
J
, T
stg
°C
Mounting torque M2.5 screws 50 Ncm
Value
11
6.8
24
±30
34
-55 ... 150
0.74
2.2
50
±20
V
DS
@ T
J
=25°C 900 V
R
DS(on),max
@ T
J
= 25°C 0.5
Ω
Q
g,typ
68 nC
Product Summary
Type Package Marking
IPA90R500C3 PG-TO220 FP 9R500C
PG-TO220 FP
Rev. 1.0 page 1 2008-07-29
