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IPA90R500C3XKSA1
P1-P3
P4-P6
P7-P9
P10-P10
IPA90R500C3
1 Power dissipation
2 Safe operating area
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
3 Max. transient thermal impedance
4 Typ. output characteristics
Z
thJC
=f(t
P
)
I
D
=f(
V
DS
);
T
J
=25 °C
parameter:
D=t
p
/
T
parameter:
V
GS
0
10
20
30
40
0
25
50
75
100
125
150
T
C
[°C]
P
tot
[W]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
2
10
1
10
0
10
-1
1
10
100
1000
V
DS
[V]
I
D
[A]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
0
10
-1
10
-2
t
p
[s]
Z
thJC
[K/W]
4 V
4.5 V
5 V
5.5 V
6 V
8 V
10 V
20 V
0
5
10
15
20
25
30
35
0
5
10
15
20
25
V
DS
[V]
I
D
[A]
limited by on-state
resistance
Rev. 1.0
page 4
2008-07-29
IPA90R500C3
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I
D
=f(
V
DS
);
T
J
=150 °C
R
DS(on)
=f(
I
D
);
T
J
=150 °C
parameter:
V
GS
parameter:
V
GS
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R
DS(on)
=f(
T
J
);
I
D
=6.6 A;
V
GS
=10 V
I
D
=f(
V
GS
);
V
DS
=20V
parameter:
T
J
typ
98 %
0
0.3
0.6
0.9
1.2
1.5
-60
-20
20
60
100
140
180
T
J
[°C]
R
DS(on)
[
Ω
]
25 °C
150 °C
0
5
10
15
20
25
30
35
02468
1
0
V
GS
[V]
I
D
[A]
4 V
4.5 V
5 V
6 V
8 V
10 V
20 V
0
5
10
15
0
5
10
15
20
25
V
DS
[V]
I
D
[A]
4 V
4.5 V
4.8 V
5 V
10 V
0
2
4
6
8
10
0
5
10
15
20
25
I
D
[A]
R
DS(on)
[
Ω
]
Rev. 1.0
page 5
2008-07-29
IPA90R500C3
9 Typ. gate charge
10 Forward characteristics of reverse diode
V
GS
=f(
Q
gate
);
I
D
=6.6 A pulsed
I
F
=f(
V
SD
)
parameter:
V
DD
parameter:
T
J
11 Avalanche energy
12 Drain-source breakdown voltage
E
AS
=f(
T
J
);
I
D
=2.2 A;
V
DD
=50 V
V
BR(DSS)
=f(
T
J
);
I
D
=0.25 mA
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10
2
10
1
10
0
10
-1
0
0.5
1
1.5
2
V
SD
[V]
I
F
[A]
400 V
720 V
0
2
4
6
8
10
02
0
4
0
6
0
8
0
Q
gate
[nC]
V
GS
[V]
800
850
900
950
1000
1050
-60
-20
20
60
100
140
180
T
J
[°C]
V
BR(DSS)
[V]
0
100
200
300
400
25
50
75
100
125
150
T
J
[°C]
E
AS
[mJ]
Rev. 1.0
page 6
2008-07-29
P1-P3
P4-P6
P7-P9
P10-P10
IPA90R500C3XKSA1
Mfr. #:
Buy IPA90R500C3XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET LOW POWER_LEGACY
Lifecycle:
New from this manufacturer.
Delivery:
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IPA90R500C3XKSA1