OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IPB70N10SL16ATMA1

P1-P3P4-P6P7-P8
2006-02-14
Page 1
IPI70N10SL-16
IPP70N10SL-16, IPB70N10SL-16
SIPMOS
Power-Transistor
Product Summary
V
DS
100 V
R
DS
(
on
)
16 mΩ
I
D
70 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P-TO263-3-2 P-TO220-3-1P-TO262-3-1
2
P
-
TO220
-
3
-
1
2
3
1
Marking
N10L16
N10L16
N10L-16
Type Package Ordering Code
IPP70N10SL-16 PG-TO220-3-1 SP0002-25708
IPB70N10SL-16 PG-TO263-3-2 SP0002-25700
IPI70N10SL-16 PG-TO262-3-1 SP000225705
Maximum Ratings, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Value Unit
Continuous drain current
T
C
=25°C
I
D
70
50
A
Pulsed drain current
T
C
=25°C
I
D puls
280
Avalanche energy, single pulse
I
D
=70 A ,
V
DD
=25V,
R
GS
=25Ω
E
AS
700 mJ
Avalanche energy, periodic limited by T
j
max
E
AR
25
Reverse diode d
v
/d
t
I
S
=70A,
V
DS
=0V, d
i
/d
t
=200A/µs
d
v
/d
t
6 kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
C
=25°C
P
tot
250 W
Operating and storage temperature T
j
, T
st
g
-55... +175
°C
IEC climatic category; DIN IEC 68-1 55/175/56
TC=100°C
• Green Package
(lead free)
2006-02-14
Page 2
IPI70N10SL-16
IPP70N10SL-16, IPB70N10SL-16
Thermal Characteristics
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
R
thJC
- - 0.6 K/W
Thermal resistance, junction - ambient, leaded
R
thJA
- - 62.5
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
62
40
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=2mA
V
(BR)DSS
100 - - V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 2 mA
V
GS(th)
1.2 1.6 2
Zero gate voltage drain current
V
DS
=100V,
V
GS
=0V,
T
j
=25°C
V
D
S
=100V,
V
GS
=0V,
T
=150°C
I
DSS
-
-
0.1
-
1
100
µA
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
I
GSS
- 10 100 nA
Drain-source on-state resistance
V
GS
=4.5V, I
D
=50A
R
DS(on)
- 14 25
mΩ
Drain-source on-state resistance
V
GS
=10V, I
D
=50A
R
DS(on)
- 10 16
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2006-02-14
Page 3
IPI70N10SL-16
IPP70N10SL-16, IPB70N10SL-16
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=50A
30 65 - S
Input capacitance
C
iss
V
GS
=0V,
V
DS
=25V,
f
=1MHz
- 3630 4540 pF
Output capacitance
C
oss
- 640 800
Reverse transfer capacitance
C
rss
- 345 430
Turn-on delay time
t
d
(
on
)
V
DD
=50V,
V
GS
=4.5V,
I
D
=70A,
R
G
=1.3Ω
- 70 105 ns
Rise time
t
r
- 250 375
Turn-off delay time
t
d
(
off
)
- 250 375
Fall time
t
f
- 95 145
Gate Charge Characteristics
Gate to source charge
Q
g
s
V
DD
=80V, I
D
=70A - 10 15 nC
Gate to drain charge
Q
g
d
- 34 51
Gate charge total Q
g
V
DD
=80V, I
D
=70A,
V
GS
=0 to 10V
- 160 240
Gate plateau voltage V
(p
lateau
)
V
DD
=80V, I
D
=70A - 3.22 - V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C - - 70 A
Inv. diode direct current, pulsed
I
SM
- - 280
Inverse diode forward voltage V
SD
V
GS
=0V,
I
F
=140A - 1.2 1.8 V
Reverse recovery time
t
rr
V
R
=50V,
I
F
=
l
S
,
d
i
F
/d
t
=100A/µs
- 100 150 ns
Reverse recovery charge
Q
rr
- 600 900 nC
P1-P3P4-P6P7-P8

IPB70N10SL16ATMA1

Mfr. #:
Buy IPB70N10SL16ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_100+
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet