OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IPB70N10SL16ATMA1

P1-P3P4-P6P7-P8
2006-02-14
Page 4
IPI70N10SL-16
IPP70N10SL-16, IPB70N10SL-16
1 Power dissipation
P
tot
= f (
T
C
)
0 20 40 60 80 100 120 140 160
°C
190
T
C
0
20
40
60
80
100
120
140
160
180
200
220
240
W
280
SPP70N10L
P
tot
2 Drain current
I
D
= f (
T
C
)
parameter: V
GS
≥ 10 V
0 20 40 60 80 100 120 140 160
°C
190
T
C
0
5
10
15
20
25
30
35
40
45
50
55
60
A
75
SPP70N10L
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
C
= 25 °C
10
-1
10
0
10
1
10
2
10
3
V
V
DS
0
10
1
10
2
10
3
10
A
SPP70N10L
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
t
p
= 18.0µs
4 Max. transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPP70N10L
Z
thJC
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
2006-02-14
Page 5
IPI70N10SL-16
IPP70N10SL-16, IPB70N10SL-16
5 Typ. output characteristic
I
D
= f (
V
DS
);
T
j
=25°C
parameter: t
p
= 80 µs
0 1 2 3 4
V
5.5
V
DS
0
20
40
60
80
100
120
140
A
170
SPP70N10L
I
D
V
GS
[V]
a
a 2.5
b
b 3.0
c
c 3.5
d
d 4.0
e
e 4.5
f
f 5.0
g
g 5.5
h
h 6.0
i
i 6.5
j
j 7.0
k
k 8.0
l
P
tot
= 250W
l 10.0
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter:
V
GS
0 20 40 60 80 100
A
130
I
D
0
10
20
30
40
50
60
mΩ
80
SPP70N10L
R
DS(on)
V
GS
[V] =
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
5.5
h
h
6.0
i
i
6.5
j
j
7.0
k
k
8.0
l
l
10.0
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
≥ 2 x I
D
x R
DS(on)max
parameter: t
p
= 80 µs
0 0.5 1 1.5 2 2.5 3 3.5 4
V
5
V
GS
0
5
10
15
20
25
30
35
40
45
50
55
60
A
70
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
g
f
s
0 10 20 30 40
A
55
I
D
0
5
10
15
20
25
30
35
40
45
50
S
60
g
fs
2006-02-14
Page 6
IPI70N10SL-16
IPP70N10SL-16, IPB70N10SL-16
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 50 A,
V
GS
= 4.5 V
-60 -20 20 60 100 140
°C
200
T
j
0
10
20
30
40
50
60
70
80
90
mΩ
110
SPP70N10L
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
, I
D
= 2 mA
-60 -20 20 60 100 140
°C
200
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
V
3
V
GS(th)
min
typ
max
11 Typ. capacitances
C = f (
V
DS
)
parameter:
V
GS
=0V, f=1 MHz
0 5 10 15 20 25 30
V
40
V
DS
2
10
3
10
4
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
, tp = 80 µs
0 0.4 0.8 1.2 1.6 2 2.4
V
3
V
SD
0
10
1
10
2
10
3
10
A
SPP70N10L
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 175 °C typ
T
j
= 175 °C (98%)
P1-P3P4-P6P7-P8

IPB70N10SL16ATMA1

Mfr. #:
Buy IPB70N10SL16ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_100+
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet