CY14U256LA-BA35XI Datasheet CY14U256LA-BA35XI, CY14U256LA-BA35XIT | P19-P21

CY14U256LA

Document Number: 001-86200 Rev. *B Page 19 of 22

Package Diagrams

Figure 13. 48-ball FBGA (6 × 10 × 1.2 mm) BA48B Package Outline, 51-85128

51-85128 *F

CY14U256LA

Document Number: 001-86200 Rev. *B Page 20 of 22

Acronyms Document Conventions

Units of Measure

Acronym Description

Chip Enable

CMOS Complementary Metal Oxide Semiconductor

EIA Electronic Industries Alliance

FBGA Fine-Pitch Ball Grid Array

HSB

Hardware Store Busy

I/O Input/Output

nvSRAM Nonvolatile Static Random Access Memory

Output Enable

SRAM Static Random Access Memory

RoHS Restriction of Hazardous Substances

RWI Read and Write Inhibited

Write Enable

Symbol Unit of Measure

°C degree Celsius

k kilohm

MHz megahertz

A microampere

F microfarad

s microsecond

mA milliampere

mm millimeter

ms millisecond

ns nanosecond

 ohm

% percent

pF picofarad

V volt

W watt

CY14U256LA

Document Number: 001-86200 Rev. *B Page 21 of 22

Document History Page

Document Title: CY14U256LA, 256-Kbit (32 K × 8) nvSRAM

Document Number: 001-86200

Rev. ECN No.

Orig. of

Change

Submission

Date

Description of Change

** 3918324 GVCH 03/01/2013 New data sheet.

*A 4024815 GVCH 06/10/2013 Changed status from “Summary” to “Final”.

Updated Maximum Ratings:

Removed “Ambient temperature with power applied” and added “Maximum

junction temperature”.

*B 4568158 GVCH 11/13/2014 Added related documentation hyperlink in page 1.

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P21 P22-P22

CY14U256LA-BA35XI

Mfr. #:

Buy CY14U256LA-BA35XI

Manufacturer:

Cypress Semiconductor

Description:

NVRAM 256Kb 1.95V 35ns nvSRAM

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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CY14U256LA-BA35XI

CY14U256LA-BA35XI

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