CY14U256LA
Document Number: 001-86200 Rev. *B Page 7 of 22
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Maximum accumulated storage time:
At 150 C ambient temperature ..................... 1000 h
At 85 C ambient temperature .................... 20 Years
Maximum junction temperature ................................. 150 C
Supply voltage on V
CC
relative to V
SS
...........–0.5 V to 4.1 V
Supply voltage on V
CCQ
relative to V
SS
......–0.5 V to 2.45 V
Voltage applied to outputs
in High Z State ..................................–0.5 V to V
CCQ
+ 0.5 V
Input voltage .....................................–0.5 V to V
CCQ
+ 0.5 V
Transient voltage (< 20 ns) on
any pin to ground potential ...............–2.0 V to V
CCQ
+ 2.0 V
Package power dissipation
capability (T
A
= 25 °C) .................................................1.0 W
Surface mount Pb soldering
temperature (3 seconds) ......................................... +260 C
DC output current
(1 output at a time, 1s duration) ..................................15 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) ......................... > 2001 V
Latch up current .................................................... > 140 mA
Operating Range
Range
Ambient
Temperature
V
CC
V
CCQ
Industrial –40 C to +85 C 2.7 V to 3.6 V 1.65 V to 1.95 V
DC Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions Min Typ
[4]
Max Unit
V
CC
Power supply voltage 2.7 3.0 3.6 V
V
CCQ
1.65 1.8 1.95 V
I
CC1
Average V
CC
current t
RC
= 35 ns
Values obtained without output
loads (I
OUT
= 0 mA)
––60mA
I
CCQ1
Average V
CCQ
current 20 mA
I
CC2
Average V
CC
current during
STORE
All inputs don’t care, V
CC
= Max
Average current for duration t
STORE
––10mA
I
CC3
Average V
CC
current at
t
RC
= 200 ns, V
CC(Typ)
, 25 °C
All inputs cycling at CMOS levels.
Values obtained without output
loads (I
OUT
= 0 mA)
–35mA
I
CCQ3
Average V
CCQ
current at
t
RC
= 200 ns, V
CCQ(Typ)
, 25 °C
–5mA
I
CC4
Average V
CAP
current during
AutoStore cycle
All inputs don’t care. Average
current for duration t
STORE
––8mA
I
SB
V
CC
standby current CE > (V
CCQ
– 0.2 V).
V
IN
< 0.2 V or > (V
CCQ
– 0.2 V).
Standby current level after
nonvolatile cycle is complete. Inputs
are static. f = 0 MHz
––8mA
I
IX
[5]
Input leakage current
(except HSB
)
V
CCQ
= Max, V
SS
< V
IN
< V
CCQ
–1 +1 µA
Input leakage current (for HSB
)V
CCQ
= Max, V
SS
< V
IN
< V
CCQ
–100 +1 µA
Notes
4. Typical values are at 25 °C, V
CC
= V
CC(Typ)
and V
CCQ
= V
CCQ(Typ)
. Not 100% tested.
5. The HSB
pin has I
OUT
= –4 µA for V
OH
of 1.07 V when both active HIGH and LOW drivers are disabled. When they are enabled standard V
OH
and V
OL
are valid. This
parameter is characterized but not tested.
CY14U256LA
Document Number: 001-86200 Rev. *B Page 8 of 22
I
OZ
Off-state output leakage current V
CCQ
= Max, V
SS
< V
OUT
< V
CCQ
,
CE or OE > V
IH
or WE < V
IL
–1 +1 µA
V
IH
Input HIGH voltage 0.7 × V
CCQ
–V
CCQ
+ 0.3 V
V
IL
Input LOW voltage – 0.3 0.3 × V
CCQ
V
V
OH
Output HIGH voltage I
OUT
= –1 mA V
CCQ
0.45 V
V
OL
Output LOW voltage I
OUT
= 2 mA 0.45 V
V
CAP
[6]
Storage capacitor Between V
CAP
pin and V
SS
120 150 180 µF
V
VCAP
[7, 8]
Maximum voltage driven on V
CAP
pin by the device
V
CC
= Max V
CC
V
Data Retention and Endurance
Parameter Description Min Unit
DATA
R
Data retention 20 Years
NV
C
Nonvolatile STORE operations 1,000 K
Capacitance
Parameter
[8]
Description Test Conditions Max Unit
C
IN
Input capacitance (except HSB)T
A
= 25 C, f = 1 MHz, V
CC
= V
CC(Typ)
, V
CCQ
= V
CCQ(Typ)
7pF
Input capacitance (for HSB) 8pF
C
OUT
Output capacitance (except HSB)7pF
Output capacitance (for HSB)8pF
Thermal Resistance
Parameter
[8]
Description Test Conditions 48-ball FBGA Unit
JA
Thermal resistance
(junction to ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
48.19 C/W
JC
Thermal resistance
(junction to case)
6.5 C/W
DC Electrical Characteristics (continued)
Over the Operating Range
Parameter Description Test Conditions Min Typ
[4]
Max Unit
CY14U256LA
Document Number: 001-86200 Rev. *B Page 9 of 22
AC Test Conditions
Input pulse levels ................................................0 V to 1.8 V
Input rise and fall times (10% to 90%) ..................... <
1.8 ns
Input and output timing reference levels .......................0.9 V
AC Test Loads
Figure 3. AC Test Loads
1.8 V
OUTPUT
5 pF
R1
R2
450
1.8 V
OUTPUT
30 pF
R1
R2
450
for tri-state specs
450
450

CY14U256LA-BA35XI

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
NVRAM 256Kb 1.95V 35ns nvSRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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