MMIX1G320N60B3 Datasheet MMIX1G320N60B3 | P1-P3

DS100264A(08/11)

GenX3

TM

600V

IGBT

V

CES

= 600V

I

C25

= 400A

V

CE(sat)

≤≤

≤ 1.50V

Features

z

Silicon Chip on Direct-Copper Bond

(DCB) Substrate

z

Isolated Mounting Surface

z

2500V~ Electrical Isolation

z

Optimized for Low Conduction and

Switching Losses

z

Very High Current Capability

z

Square RBSOA

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Applications

z

Power Inverters

z

UPS

z

Motor Drives

z

SMPS

z

PFC Circuits

z

Battery Chargers

z

Welding Machines

z

Lamp Ballasts

Medium-Speed Low-Vsat PT

IGBT for 5-40 kHz Switching

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 1mA, V

GE

= 0V 600 V

V

GE(th)

I

C

= 4mA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

, V

GE

= 0V 75 μA

T

J

= 125°C 2 mA

I

GES

V

CE

= 0V, V

GE

= ± 20V ±400 nA

V

CE(sat)

I

C

= 100A, V

GE

= 15V, Note 1 1.20 1.50 V

I

C

= 320A 1.67 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 600 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 600 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C 400 A

I

C110

T

C

= 110°C 180 A

I

CM

T

C

= 25°C, 1ms 1000 A

SSOA V

GE

= 15V, T

VJ

= 125°C, R

G

= 1Ω I

CM

= 320 A

(RBSOA) Clamped Inductive Load V

CE

< V

CES

V

P

C

T

C

= 25°C 1000 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062 in.) from Case for 10 260 °C

V

ISOL

50/60Hz, 1 minute 2500 V~

F

C

Mounting Force 50..200/11..45 N/lb.

Weight 8 g

MMIX1G320N60B3

G = Gate E = Emitter

C = Collector

G

C

E

Isolated Tab

C

E

G

Preliminary Technical Information

(Electrically Isolated Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

MMIX1G320N60B3

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 60A, V

CE

= 10V, Note 1 75 130 S

C

ies

18 nF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 960 pF

C

res

130 pF

Q

g

585 nC

Q

ge

I

C

= 320A, V

GE

= 15V, V

CE

= 0.5 • V

CES

105 nC

Q

gc

215 nC

t

d(on)

44 ns

t

ri

66 ns

E

on

2.7 mJ

t

d(off)

250 ns

t

fi

165 ns

E

off

3.5 5.0 mJ

t

d(on)

40 ns

t

ri

67 ns

E

on

3.5 mJ

t

d(off)

330 ns

t

fi

265 ns

E

off

5.4 mJ

R

thJC

0.125 °C/W

R

thCS

0.05 °C/W

Inductive Load, T

J

= 125°C

I

C

= 100A,V

GE

= 15V

V

CE

= 0.8 • V

CES

, R

G

= 1Ω

Inductive Load, T

J

= 25°C

I

C

= 100A,V

GE

= 15V

V

CE

= 0.8 • V

CES

, R

G

= 1Ω

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

MMIX1G320N60B3

PIN: 1 = Gate

5-12 = Emitter

13-24 = Collector

Package Outline

MMIX1G320N60B3

MMIX1G320N60B3

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