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MMIX1G320N60B3

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIX1G320N60B3
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
0 0.5 1 1.5 2 2.5 3 3.5
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
11V
9V
6V
8V
5V
7V
Fig. 2. Output Characteristics @ T
J
= 125ºC
0
50
100
150
200
250
300
350
0 0.5 1 1.5 2 2.5 3 3.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
11V
9V
7V
5V
6V
8V
Fig. 3. Dependence of V
CE(sat)
on
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 320A
I
C
= 160A
I
C
= 80A
Fig. 4. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1.0
1.5
2.0
2.5
3.0
3.5
5 6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 320
A
T
J
= 25ºC
80
A
160
A
Fig. 5. Input Admittance
0
50
100
150
200
250
300
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 6. Transconductance
0
40
80
120
160
200
240
280
320
0 50 100 150 200 250 300
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
© 2011 IXYS CORPORATION, All Rights Reserved
MMIX1G320N60B3
Fig. 9. Reverse-Bias Safe Operating Area
0
50
100
150
200
250
300
350
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 1Ω
dv / dt < 10V / ns
Fig. 7. Gate Charge
0
2
4
6
8
10
12
14
16
0 100 200 300 400 500 600
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 320A
I
G
= 10mA
Fig. 8. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 11. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 10. Maximum Transient Thermal Impedance
dasdasd
0.3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIX1G320N60B3
Fig. 11. Inductive Switching
Energy Loss vs. Gate Resistance
0
1
2
3
4
5
6
7
8
12345678910
R
G
- Ohms
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 100A
I
C
= 50A
Fig. 14. Inductive Turn-off
Switching Times vs. Gate Resistance
210
220
230
240
250
260
270
280
290
300
12345678910
R
G
- Ohms
t
f i
- Nanoseconds
200
300
400
500
600
700
800
900
1000
1100
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 100A
Fig. 12. Inductive Switching
Energy Loss vs. Collector Current
0
1
2
3
4
5
6
7
8
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
E
off
- MilliJoules
0.5
1
1.5
2
2.5
3
3.5
4
4.5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1
Ω ,
V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Inductive Switching
Energy Loss vs. Junction Temperature
0
1
2
3
4
5
6
7
8
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.5
1
1.5
2
2.5
3
3.5
4
4.5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1Ω
,
V
GE
= 15V
V
CE
= 480V
I
C
= 100A
I
C
= 50A
Fig. 15. Inductive Turn-off
Switching Times vs. Collector Current
100
125
150
175
200
225
250
275
300
325
350
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
f i
- Nanoseconds
220
240
260
280
300
320
340
360
380
400
420
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 16. Inductive Turn-off
Switching Times vs. Junction Temperature
100
120
140
160
180
200
220
240
260
280
300
50 55 60 65 70 75 80 85 90 95 100
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
240
250
260
270
280
290
300
310
320
330
340
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 480V
I
C
= 100A
I
C
= 50A
P1-P3P4-P6P7-P7

MMIX1G320N60B3

Mfr. #:
Buy MMIX1G320N60B3
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules Disc IGBT SMPD Pkg-Standard SMPD-B
Lifecycle:
New from this manufacturer.
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