HMC406MS8GE

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
1
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
General Description
Features
Functional Diagram
The HMC406MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
Power amplier which operates between 5 and 6
GHz. The amplier is packaged in a low cost, surface
mount 8 leaded package with an exposed base
for improved RF and thermal performance. With
a minimum of external components, the amplier
provides 17 dB of gain and +29 dBm of saturated
power at 38% PAE from a +5V supply voltage. Vpd
can be used for full power down or RF output power/
current control.
Gain: 17 dB
Saturated Power: +29 dBm
38% PAE
Supply Voltage: +5V
Power Down Capability
Low External Part Count
Electrical Specications, T
A
= +25° C, Vs = 5V, Vpd = 5V
Typical Applications
The HMC406MS8G(E) is ideal for:
• WiMAX & WiLAN
• DSRC
• Military & Maritime
• Private Mobile Radio
• UNII & ISM
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 5 - 6 5.7 - 5.9 GHz
Gain 13 16 21 14 17 21 dB
Gain Variation Over Temperature 0.03 0.04 0.03 0.04 dB/ °C
Input Return Loss 10 11 dB
Output Return Loss 8 9 dB
Output Power for 1 dB Compression (P1dB) 21 24 24 27 dBm
Saturated Output Power (Psat) 27 29 dBm
Output Third Order Intercept (IP3) 34 38 34 38 dBm
Noise Figure 6.0 6.0 dB
Supply Current (Icq) Vpd = 0V/5V 0.002 / 300 0.002 / 300 mA
Control Current (Ipd) Vpd = 5V 7 7 mA
Switching Speed tON, tOFF 35 35 ns
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC406* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
HMC406MS8G Evaluation Board
DOCUMENTATION
Application Notes
AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
Data Sheet
HMC406 Data Sheet
TOOLS AND SIMULATIONS
HMC406 S-Parameter
REFERENCE MATERIALS
Quality Documentation
HMC Legacy PCN: MS##, MS##E and MS##G,MS##GE
packages - Relocation of pre-existing production
equipment to new building
Package/Assembly Qualification Test Report: MS8G (QTR:
2014-00393)
PCN: MS, QS, SOT, SOIC packages - Sn/Pb plating vendor
change
Semiconductor Qualification Test Report: GaAs HBT-B
(QTR: 2013-00229)
DESIGN RESOURCES
HMC406 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
View all HMC406 EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
DOCUMENT FEEDBACK
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
2
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
345678
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
14
18
22
26
30
34
4.5 5 5.5 6 6.5
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
14
18
22
26
30
34
4.5 5 5.5 6 6.5
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
-15
-10
-5
0
4.5 5 5.5 6 6.5
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
4.5 5 5.5 6 6.5
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
4.5 5 5.5 6 6.5
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D

HMC406MS8GE

Mfr. #:
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier InGaP HBT pow amp SMT, 5 - 6 GHz
Lifecycle:
New from this manufacturer.
Delivery:
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