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PESD18VV1BBSFYL

P1-P3P4-P6P7-P9P10-P11
PESD18VV1BBSF
Very symmetrical bidirectional ESD protection diode
Rev. 1 — 20 December 2017 Product data sheet
1 Product profile
1.1 General description
Very symmetrical bidirectional ElectroStatic Discharge (ESD) protection diode. This
device is housed in a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted
Device (SMD) package designed to protect one signal line from the damage caused by
ESD and other transients.
1.2 Features and benefits
• Bidirectional ESD protection of one line
• Extremely symmetrical layout
• Very low diode capacitance C
d
= 5.5 pF max.
• Low clamping to protect sensitive I/Os
• Extremely low inductance protection path to ground
• ESD protection up to ± 25 kV contact according to IEC 61000-4-2
• Ultra small SMD package
1.3 Applications
• Cellular handsets and accessories
• Portable electronics
• Communication systems
• Computers and peripherals
1.4 Quick reference data
Table 1. Quick reference data
T
amb
= 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
reverse standoff voltage -18 - 18 V
C
d
diode capacitance f = 1 MHz; V
R
= 0 V - 4.1 5.5 pF
Nexperia
PESD18VV1BBSF
Very symmetrical bidirectional ESD protection diode
PESD18VV1BBSF All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 20 December 2017
2 / 11
2 Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode (diode 1)
2 K cathode (diode 2)
Transparent
top view
21
sym045
21
3 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PESD18VV1BBSF DSN0603-2 leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962
4 Marking
Table 4. Marking
Type number Marking code
PESD18VV1BBSF b
Nexperia
PESD18VV1BBSF
Very symmetrical bidirectional ESD protection diode
PESD18VV1BBSF All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 20 December 2017
3 / 11
5 Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
j
junction temperature - 150 °C
T
amb
ambient temperature -40 125 °C
T
stg
storage temperature -65 150 °C
Table 6. Maximum ratings
Symbol Parameter Conditions Min Max Unit
V
ESD
electrostatic discharge voltage IEC 61000-4-2 (contact discharge)
[1]
-25 25 kV
[1] Device stressed with ten non-repetitive ESD pulses.
Table 7. ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD) > 8 kV (contact)
t (µs)
0 403010 20
001aaa630
40
80
120
I
PP
(%)
0
e
-t
100 % I
PP
; 8 µs
50 % I
PP
; 20 µs
Figure 1. 8/20 µs pulse waveform according to IEC
61000-4-5
001aaa631
I
PP
100 %
90 %
t
30 ns
60 ns
10 %
t
r
= 0.6 ns to 1 ns
Figure 2. ESD pulse waveform according to IEC
61000-4-2
P1-P3P4-P6P7-P9P10-P11

PESD18VV1BBSFYL

Mfr. #:
Buy PESD18VV1BBSFYL
Manufacturer:
Nexperia
Description:
ESD Suppressors / TVS Diodes PESD18VV1BBSF/SOD962/SOD962
Lifecycle:
New from this manufacturer.
Delivery:
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