PESD18VV1BBSFYL

Nexperia
PESD18VV1BBSF
Very symmetrical bidirectional ESD protection diode
PESD18VV1BBSF All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 20 December 2017
4 / 11
6 Characteristics
Table 8. Characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
reverse standoff
voltage
-18 - 18 V
C
d
diode capacitance f = 1 MHz; V
R
= 0 V - 4.1 5.5 pF
I
PPM
rated peak pulse
current
t
p
= 8/20 µs - - 3 A
I
RM
reverse leakage
current
V
RWM
= 18 V - 1 100 nA
r
dyn
dynamic resistance I
R
= 10 A
[1]
- 0.37 -
r
dyn
dynamic resistance I
R
= -10 A
[1]
- 0.37 -
V
CL
clamping voltage I
PP
= 3 A; t
p
= 8/20 μs - 22.8 26.5 V
[1] Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse; ANS/IESD STM5.1-2008.
f (Hz)
10
7
10
10
10
9
10
8
aaa-027529
0
S21
(dB)
-20
-2
-4
-6
-8
-10
-12
-14
-16
-18
Figure 3. Insertion loss; typical values
V (V)
-20 20
aaa-027530
8
C
d
(pF)
0
2
4
6
-10 0 10
Figure 4. Capacitance as a function of reverse standoff
voltage; typical values
Nexperia
PESD18VV1BBSF
Very symmetrical bidirectional ESD protection diode
PESD18VV1BBSF All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 20 December 2017
5 / 11
V (V)
0 30
aaa-027531
30
I
(A)
0
5
10
15
20
25
5 10 15 20 25
Figure 5. Dynamic resistance with positive clamping;
typical values. Transmission Line Pulse (TLP) t
p
= 100
ns; rise time = 1 ns
V (V)
-30 0
aaa-027532
0
I
(A)
-30
-25
-20
-15
-10
-5
-25 -20 -15 -10 -5
Figure 6. Dynamic resistance with negative clamping;
typical values. Transmission Line Pulse (TLP) t
p
= 100
ns; rise time = 1 ns
The device uses an advanced clamping structure showing a negative dynamic
resistance. This snap-back behaviour strongly reduces the clamping voltage to the
system behind the ESD protection during an ESD event. Do not connect unlimited DC
current sources to the data lines to avoid keeping the ESD protection device in snap-
back state after exceeding breakdown voltage (due to an ESD pulse for instance).
V
CL
(V)
0 30
aaa-027533
3
I
PP
(A)
0
5 10 15 20 25
0.5
1
1.5
2
2.5
Figure 7. Dynamic resistance with positive clamping;
typical values, IEC 61000-4-5; t
p
= 8/20 µs; positive pulse
V
CL
(V)
-30 0
aaa-027534
0
I
PP
(A)
-3
-25 -20 -15 -10 -5
-2.5
-2
-1.5
-1
-0.5
Figure 8. Dynamic resistance with negative clamping;
typical values; IEC 61000-4-5; t
p
= 8/20 µs; positive pulse
Nexperia
PESD18VV1BBSF
Very symmetrical bidirectional ESD protection diode
PESD18VV1BBSF All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 20 December 2017
6 / 11
7 Application information
The device is designed for the protection of one data or signal line from surge pulses
and ESD damage. The device is suitable on lines where the signal polarities are both,
positive and negative with respect to ground.
The device uses an advanced clamping structure showing a negative dynamic
resistance. This snap-back behaviour strongly reduces the clamping voltage to the
system behind the ESD protection during an ESD event. Do not connect unlimited DC
current sources to the data lines to avoid keeping the ESD protection device in snap-
back state after exceeding breakdown voltage (due to an ESD pulse for instance).
aaa-002737
ESD protection diode
GND
line to be protected
Figure 9. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground
loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.

PESD18VV1BBSFYL

Mfr. #:
Manufacturer:
Nexperia
Description:
ESD Suppressors / TVS Diodes PESD18VV1BBSF/SOD962/SOD962
Lifecycle:
New from this manufacturer.
Delivery:
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