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MUBW15-12A6

P1-P3P4-P6P7-P9
© 2007 IXYS All rights reserved
7 - 9
20071113a
MUBW15-12A6K
IXYS reserves the right to change limits, test conditions and dimensions.
0 200 400 600 800 1000
0
10
20
30
40
50
0
40
80
120
160
200
0 1 2 3 4 5 6 7
0
5
10
15
20
25
30
0 10 20 30 40 50 60
0
5
10
15
20
0 1 2 3 4 5 6 7
0
5
10
15
20
25
30
V
CE
= 600V
I
C
= 10A
V
CE
V
I
C
V
CE
A
I
C
V
Q
G
-di/dt
V
V
GE
I
RM
t
rr
A/Ps
MUBW1012A7
I
RM
t
rr
9 V
11 V
A
11 V
A
4 6 8 10 12 14 16
0
5
10
15
20
25
30
V
CE
= 20V
V
V
GE
A
I
C
T
VJ
= 25°C
T
VJ
= 125°C
0 1 2 3 4
0
10
20
30
40
50
V
V
F
I
F
A
ns
nC
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
V
R
= 600 V
I
F
= 15 A
T
VJ
= 25°C
9 V
13 V
15 V
V
GE
= 17 V
13 V
15 V
V
GE
= 17 V
T
VJ
= 125°C
Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics
Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics
of free wheeling diode
Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics
of free wheeling diode
© 2007 IXYS All rights reserved
8 - 9
20071113a
MUBW15-12A6K
IXYS reserves the right to change limits, test conditions and dimensions.
0 5 10 15 20
0
1
2
3
4
0
20
40
60
80
0 5 10 15 20
0
1
2
3
4
0
100
200
300
400
0.001 0.01 0.1 1 10
0.01
0.1
1
10
0 20 40 60 80 100 120 140
0.0
0.4
0.8
1.2
0
200
400
600
0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
0
25
50
75
100
single pulse
V
CE
= 600V
V
GE
= ±15V
R
G
= 82:
T
VJ
= 125°C
V
CE
= 600V
V
GE
= ±15V
I
C
= 10A
T
VJ
= 125°C
0 200 400 600 800 1000 1200 1400
0
5
10
15
20
25
30
R
G
= 82 :
T
VJ
= 125°C
V
CE
= 600V
V
GE
= ±15V
R
G
= 82:
T
VJ
= 125°C
E
on
V
CE
= 600V
V
GE
= ±15V
I
C
= 10A
T
VJ
= 125°C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
:
R
G
:
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
V
A
mJ
ns
ns
mJ
IGBT
diode
MUBW 15-12A6K
Fig. 13 Typ. turn on energy and switching
times versus collector current
Fig. 14 Typ. turn off energy and switching
times versus collector current
Fig. 15 Typ. turn on energy and switching
times versus gate resistor
Fig.16 Typ. turn off energy and switching
times versus gate resistor
Fig. 17 Reverse biased safe operating area
RBSOA
Fig. 18 Typ. transient thermal impedance
© 2007 IXYS All rights reserved
9 - 9
20071113a
MUBW15-12A6K
IXYS reserves the right to change limits, test conditions and dimensions.
0 1 2 3 4 5 6
0
5
10
15
20
25
V
V
CE
A
I
C
0 1 2 3 4
0
5
10
15
20
25
30
V
V
F
I
F
A
0 5 10 15 20
0
1
2
3
4
0
100
200
300
400
E
off
t
d(off)
t
f
I
C
A
E
off
t
mJ
ns
0 20 40 60 80 100 120
0.0
0.4
0.8
1.2
0
200
400
600
V
CE
= 600V
V
GE
= ±15V
I
C
= 20A
T
VJ
= 125°C
E
off
t
d(off)
t
f
:
E
off
t
ns
mJ
0.001 0.01 0.1 1 10
0.01
0.1
1
10
single pulse
t
s
K/W
Z
thJC
0 25 50 75 100 125 150
100
1000
10000
T
C
:
R
R
G
V
CE
= 600V
V
GE
= ±15V
R
G
= 82:
T
VJ
= 125°C
MUBW15-12A6K
IGBT
diode
T
VJ
= 25°C
T
VJ
= 125°C
V
GE
= 15V
T
VJ
= 125°C
T
VJ
= 25°C
Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics
of free wheeling diode
Fig. 21 Typ. turn off energy and switching
times versus collector current
Fig. 22 Typ. turn off energy and switching
times versus gate resistor
Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistor resistance
versus temperature
P1-P3P4-P6P7-P9

MUBW15-12A6

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Description:
MODULE IGBT CBI E1
Lifecycle:
New from this manufacturer.
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