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L9903
September 2013
1 FEATURES
OPERATING SUPPLY VOLTAGE 8V TO 20V,
OVERVOLTAGE MAX. 40V
OPERATING SUPPLY VOLTAGE 6V WITH
IMPLEMENTED STEPUP CONVERTER
QUIESCENT CURRENT IN STANDBY MODE
LESS THAN 50µA
ISO 9141 COMPATIBLE INTERFACE
CHARGE PUMP FOR DRIVING A POWER
MOS AS REVERSE BATTERY PROTECTION
PWM OPERATION FREQUENCY UP TO
30KHZ
PROGRAMMABLE CROSS CONDUCTION
PROTECTION TIME
OVERVOLTAGE, UNDERVOLTAGE, SHORT
CIRCUIT AND THERMAL PROTECTION
REAL TIME DIAGNOSTIC
2 DESCRIPTION
Control circuit for power MOS bridge driver in auto-
motive applications with ISO 9141bus interface.
MOTOR BRIDGE CONTROLLER
Figure 2. Block Diagram
VS
DIR
PWM
EN
RX
TX
CP
CB1
GH1
S1
GL1
CB2
GH2
S2
GL2
K
=
PR
VCC
=
=
ISO-Interface
VCC
GND
ST
Ref erence
BIAS
Charge
pump
Control Logic
Overvoltage
Undervo lta ge
PWM
R
DIR
R
RX
R
TX
R
0.5
V
VS
R
S2
R
GL2
R
GL1
R
S1
R
CP
R
EN
VCC
Timer
I
KH
V
S2TH
Thermal shutdown
V
S1TH
DG
VCC
R
DG
V
STH
f
ST
=
-
+
10
1
2
4
5
3
6
7
8
20
9
16
15
17
18
19
14
12
13
11
REV. 5
Figure 1. Package
Table 1. Order Codes
Part Number Package
L9903 SO20
L9903TR Tape & Reel
SO20
L9903
2/17
Table 2. Pin Function
Figure 3. Pin Connection (Top view)
Pin Description
1 ST Open Drain Switch for Stepup converter
2 DG Open drain diagnostic output
3 PWM PWM input for H-bridge control
4 EN Enable input
5 DIR Direction select input for H-bridge control
6 PR Programmable cross conduction protection time
7 RX ISO 9141 interface, receiver output
8 TX ISO 9141 interface, transmitter input
9 K ISO 9141 Interface, bidirectional communication K-line
10 VS Supply voltage
11 CP Charge pump for driving a power MOS as reverse battery protection
12 GH1 Gate driver for power MOS highside switch in halfbridge 1
13 CB1 External bootstrap capacitor
14 S1 Source/drain of halfbridge 1
15 GH2 Gate driver for power MOS highside switch in halfbridge 2
16 CB2 External bootstrap capacitor
17 S2 Source/drain of halfbridge 2
18 GL2 Gate driver for power MOS lowside switch in halfbridge 2
19 GL1 Gate driver for power MOS lowside switch in halfbridge 1
20 GND Ground
ST
DG
PWM
EN
DIR
RX
PR
TX
K GH1
CB1
S1
CB2
GH2
S2
GL2
GL1
GND1
3
2
4
5
6
7
8
9
18
17
16
15
14
12
13
11
19
10
20
VS CP
SO20
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L9903
Table 3. Absolute Maximum Ratings
For externally applied voltages or currents exceeding these limits damage of the device may occur!
All pins of the IC are protected against ESD. The verification is performed according to MIL883C, human body
model with R=1.5k
, C=100pF and discharge voltage ±2kV, corresponding to a maximum discharge energy of
0.2mJ.
Table 4. Thermal Data
1. see application note 110 for SO packages.
.
Symbol Parameter Value Unit
V
CB1
, V
CB2
Bootstrap voltage -0.3 to 40 V
I
CB1
, I
CB2
Bootstrap current -100 mA
V
CP
Charge pump voltage -0.3 to 40 V
I
CP
Charge pump current -1 mA
V
DIR
,V
EN
,V
PWM
,V
TX
Logic input voltage -0.3 to 7 V
I
DIR
,I
EN
,I
PWM
,I
TX
Logic input current ±1 mA
V
DG
,V
RX
Logic output voltage -0.3 to 7 V
I
DG
,I
RX
Logic output current -1 mA
V
GH1
, V
GH2
Gate driver voltage -0.3 to V
SX
+ 10 V
I
GH1
, I
GH2
Gate driver current -1 mA
V
GL1
, V
GL2
Gate driver voltage -0.3 to 10 V
I
GL1
, I
GL2
Gate driver current -10 mA
V
K
K-line voltage -20 to V
S
V
V
PR
Programming input voltage -0.3 to 7 V
I
PR
Programming input current -1 mA
V
S1
, V
S2
Source/drain voltage -2 to V
VS
+ 2 V
I
S1
, I
S2
Source/drain current -10 mA
V
ST
Output voltage -0.3 to 40 V
I
ST
Step up output current -1 mA
V
VSDC
DC supply voltage -0.3 to 27 V
V
VSP
Pulse supply voltage (T < 500ms) 40 V
I
VS
DC supply current -100 mA
Symbol Parameter Value Unit
T
J
Operating junction temperature -40 to 150 °C
T
JSD
Junction temperature thermal shutdown threshold min 150 °C
T
JSDH
Junction thermal shutdown hysteresis typ 15 °C
R
th j-amb
Thermal resistance junction to ambient
1)
85 °C/W

L9903TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Motor / Motion / Ignition Controllers & Drivers Motor Bridge
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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