IXST30N60B Datasheet IXST30N60C, IXSH30N60B, IXSH30N60C | P1-P3

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 600 V

V

CGR

T

J

= 25°C to 150°C; R

GE

= 1 MΩ 600 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C55A

I

C90

T

C

= 90°C30A

I

CM

T

C

= 25°C, 1 ms 110 A

SSOA V

GE

= 15 V, T

J

= 125°C, R

G

= 2.7 Ω I

CM

= 60 A

(RBSOA) Clamped inductive load, V

CC

= 0.8 V

CES

@ 0.8 V

CES

t

SC

V

GE

= 15 V, V

CE

= 360 V, T

J

= 125°C 10µs

(SCSOA) R

G

= 33 Ω, non repetitive

P

C

T

C

= 25°C 200 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

BV

CES

I

C

= 250 µA, V

GE

= 0 V 600 V

V

GE(th)

I

C

= 2.5 mA, V

CE

= V

GE

47V

I

CES

V

CE

= 0.8 V

CES

T

J

= 25°C 100 µA

V

GE

= 0 V T

J

= 125°C1mA

I

GES

V

CE

= 0 V, V

GE

= ±20 V ±100 nA

V

CE(sat)

V

GE

= 15 V; I

C

= I

C90

30N60B 2.0 V

30N60C 2.5 V

Features

l

International standard packages

l

Short Circuit SOA capability

l

High frequency IGBT

l

New generation HDMOS

TM

process

Applications

l

AC motor speed control

l

DC servo and robot drives

l

DC choppers

l

Uninterruptible power supplies (UPS)

l

Switch-mode and resonant-mode

power supplies

Advantages

l

Easy to mount with 1 screw

(isolated mounting screw hole)

l

Surface mountable, high power case

style

l

Reduce assembly time and cost

l

High power density

98519B (11/01)

G = Gate

S = Source TAB = Drain

TO-247 AD (IXSH)

(TAB)

TO-268 (D3) ( IXST)

(TAB)

G

S

High Speed IGBT

Short Circuit SOA Capability

V

CES

I

CES

t

fi

IXSH/IXST 30N60B 600 V 2.0 V 140 ns

IXSH/IXST 30N60C 600 V 2.5 V 70 ns

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

I

C

= I

C90

; V

CE

= 10 V, 10 S

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

C

ies

3100 pF

C

oes

V

CE

= 25 V, V

GE

= 0 V, f = 1 MHz 240 pF

C

res

30 pF

Q

g

100 nC

Q

ge

I

C

= I

C90

, V

GE

= 15 V, V

CE

= 0.5 V

CES

30 nC

Q

gc

38 nC

t

d(on)

30 ns

t

ri

30 ns

t

d(off)

30N60B 150 270 ns

30N60C 90 150 ns

t

fi

30N60B 140 270 ns

30N60C 70 120 ns

E

off

30N60B 1.5 2.5 mJ

30N60C 0.7 1.2 mJ

t

d(on)

35 ns

t

ri

35 ns

E

on

0.5 mJ

t

d(off)

30N60B 270 ns

30N60C 150 ns

t

fi

30N60B 250 ns

30N60C 140

E

off

30N60B 2.5 mJ

30N60C 1.2 mJ

R

thJC

0.62 K/W

R

thCK

(TO-247) 0.25 K/W

Inductive load, T

J

= 125

°°

°C

I

C

= I

C90

, V

GE

= 15 V

V

CE

= 0.8 V

CES

, R

G

= 4.7 Ω

Note 1

TO-247 AD Outline

Inductive load, T

J

= 25

°°

°C

I

C

= I

C90

, V

GE

= 15 V

V

CE

= 0.8 V

CES

, R

G

= 4.7 Ω

Note 1

IXSH/IXST 30N60B

IXSH/IXST 30N60C

Notes: 1. Switching times may increase for V

CE

(Clamp) > 0.8 V

CES

, higher T

J

or

increased R

G

.

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

TO-268 Outline

Min Recommended Footprint

V

CE

-Volts

0 5 10 15 20 25 30 35 40

Capacitance - pF

10

100

1000

10000

T

J

- Degrees C

25 50 75 100 125 150

V

CE (sat)

- Normalized

0.6

0.8

1.0

1.2

1.4

1.6

V

CE

- Volts

012345

I

C

- Amperes

0

20

40

60

80

100

V

GE

- Volts

4 6 8 10121416

I

C

- Amperes

0

20

40

60

80

100

120

140

V

CE

- Volts

0246810

I

C

- Amperes

0

40

80

120

160

200

13V

11V

9V

7V

V

CE

= 10V

T

J

= 25°C

V

GE

= 15V

T

J

= 25°C

I

C

= 15A

I

C

= 30A

I

C

= 60A

T

J

= 125°C

C

rss

f = 1Mhz

7V

5V

V

GE

= 15V

T

J

= 25°C

V

CE

- Volts

0246810

I

C

- Amperes

0

20

40

60

80

100

120

T

J

= 125°C

C

iss

C

oss

V

GE

= 15V

7V

9V

11V

13V

VGS=15V

9V

11V

13V

Fig.3 Collector-Emitter Voltage Fig.4 Temperature Dependence

vs. Gate-Emitter Voltage of Output Saturation Voltage

Fig.5 Input Admittance Fig.6 Temperature Dependence of

Breakdown and Threshold Voltage

Fig.1 Saturation Characteristics Fig.2 Output Characterstics

IXSH/IXST 30N60B

IXSH/IXST 30N60C

IXST30N60B

IXST30N60B

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