IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
Z
thJC
(K/W)
0.001
0.01
0.1
1
D=0.2
V
CE
- Volts
0 100 200 300 400 500 600
I
C
- Amperes
0.1
1
10
100
Q
g
- nanocoulombs
0 25 50 75 100 125
V
GE
- Volts
0
3
6
9
12
15
R
G
- Ohms
0 1020304050
E
(OFF)
- millijoules
0
2
4
6
8
E
(ON)
- millijoules
0.0
0.5
1.0
1.5
2.0
T
J
= 125°C
I
C
- Amperes
0 20406080
E
(OFF)
- milliJoules
0.0
2.5
5.0
7.5
E
(ON)
- millijoules
0.0
0.5
1.0
1.5
V
CE
= 300V
I
C
= 30A
I
C
=30A
E
(ON)
E
(OFF)
E
(OFF)
E
(OFF)
T
J
= 125°C
R
G
= 4.7Ω
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
R
G
= 10Ω
T
J
= 125°C
I
C
= 60A
I
C
= 15A
E
(OFF)
E
(ON)
E
(ON)
E
(ON)
Fig.11 Transient Thermal Impedance
Fig.9 Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area
Fig.7 Turn-Off Energy per Pulse and Fig.8 Dependence of Turn-Off Energy
Fall Time on Collector Current Per Pulse and Fall Time on R
G
IXSH/IXST 30N60B
IXSH/IXST 30N60C
