©2001 Fairchild Semiconductor Corporation HUF75307T3ST Rev. B
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
55 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
55 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20V V
Drain Current
Continuous (Figure 2) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
2.6
Figure 5
A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Figures 6, 14, 15
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.1
9.09
W
mW/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250µA, V
GS
= 0V (Figure 11) 55 - - V
Gate to Source Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA (Figure 10) 2 - 4 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 50V, V
GS
= 0V - - 1 µA
V
DS
= 45V, V
GS
= 0V, T
A
= 150
o
C - - 250 µA
Gate to Source Leakage Current I
GSS
V
GS
= ±20V - - 100 nA
Drain to Source On Resistance r
DS(ON)
I
D
= 2.6A, V
GS
= 10V) (Figure 9) - 0.070 0.090 Ω
Turn-On Time t
ON
V
DD
= 30V, I
D
≅ 2.6A,
R
L
= 11.5Ω, V
GS
= 10V,
R
GS
= 25Ω
- - 55 ns
Turn-On Delay Time t
d(ON)
-5-ns
Rise Time t
r
-30-ns
Turn-Off Delay Time t
d(OFF)
-35-ns
Fall Time t
f
-25-ns
Turn-Off Time t
OFF
- - 90 ns
Total Gate Charge Q
g(TOT)
V
GS
= 0V to 20V V
DD
= 30V,
I
D
≅ 2.6A,
R
L
= 11.5Ω
I
g(REF)
= 1.0mA
(Figure 13)
-1417nC
Gate Charge at 10V Q
g(10)
V
GS
= 0V to 10V - 8.3 10 nC
Threshold Gate Charge Q
g(TH)
V
GS
= 0V to 2V - 0.6 0.8 nC
Gate to Source Gate Charge Qgs - 1.00 - nC
Gate to Drain “Miller” Charge Qgd - 4.00 - nC
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
- 250 - pF
Output Capacitance C
OSS
- 115 - pF
Reverse Transfer Capacitance C
RSS
-30-pF
Thermal Resistance Junction to Ambient R
θJA
Pad Area = 0.171 in
2
(see note 2) - - 110
o
C/W
Pad Area = 0.068 in
2
- - 128
o
C/W
Pad Area = 0.026 in
2
- - 147
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
I
SD
= 2.6A - - 1.25 V
Reverse Recovery Time t
rr
I
SD
= 2.6A, dI
SD
/dt = 100A/µs--40ns
Reverse Recovered Charge Q
RR
I
SD
= 2.6A, dI
SD
/dt = 100A/µs--50nC
NOTE:
2. 110
o
C/W measured using FR-4 board with 0.171in
2
footprint for 1000s.
HUF75307T3ST
