AOT9N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
0
3
6
9
12
15
048121620
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
V
DS
=320V
I
D
=8A
1
10
100
1000
10000
0.1 1 10 100
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
C
oss
C
rss
0.01
0.1
1
10
100
1 10 100 1000
V
DS
(Volts)
I
D
(Amps)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOT9N40 (Note F)
10
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
s
0
2
4
6
8
10
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 9: Current De-rating (Note B)
Current rating I
D
(A)
0.001
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT9N40 (Note F)
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.95°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
T
on
T
P
D
Rev 0: Dec 2010 www.aosmd.com Page 4 of 5
