1
Features
Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
AccessTime–70ns
Sector Erase Architecture
Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time – 20 µs
Fast Sector Erase Time – 300 ms
Dual-plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word and Seven 32K Word Sectors
Memory Plane B: Twenty-four 32K Word Sectors
Erase Suspend Capability
Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
Low-power Operation
–30mAActive
10 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Accelerated Program/Erase Operations
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Description
The AT49BV/LV16X4A(T) is a 2.65- to 3.3-volt 16-megabit Flash memory organized
as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 39 sectors for erase operations. The device is offered in 48-lead TSOP and
48-ball CBGA packages. The device has CE
and OE control signals to avoid any bus
contention. This device can be read or reprogrammed using a single 2.65V power
supply, making it ideally suited for in-system programming.
Pin Configurations
Pin Name Function
A0 - A19 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
READY/BUSY Output
VPP Power Supply for Accelerated Program/Erase Operations
I/O0 - I/O14 Data Inputs/Outputs
I/O15 (A-1) I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC No Connect
VCCQ Output Power Supply
16-megabit
(1Mx16/2Mx8)
3-volt Only
Flash Memory
AT49BV1604A
AT49BV1604AT
AT49BV1614A
AT49LV1614A
AT49BV1614AT
AT49LV1614AT
Rev. 1411F–FLASH–03/02
2
AT49BV1604A(T)/1614A(T)
1411F–FLASH–03/02
Note: *For the AT49BV/LV1614A(T), either pin 13 or pin 14 (TSOP package) or ball B3 or ball C4 (CBGA package) can be connected
to V
PP
or both pins can be unconnected. Accelerated program/erase operations are only achieved if a voltage of 5V ± 0.5 V or
12V ± 0.5V is applied to pin 13 (TSOP package) or ball C4 (CBGA package).
CBGA Top View
A
B
C
D
E
F
G
H
A3
A4
A2
A1
A0
CE
OE
VSS
A7
A17
A6
A5
I/O0
I/O8
I/O9
I/O1
RDY/BUSY
NC*
A18
NC
I/O2
I/O10
I/O11
I/O3
WE
RESET
VPP*
A19
I/O5
I/O12
VCC
I/O4
A9
A8
A10
A11
I/O7
I/O14
I/O13
I/O6
A13
A12
A14
A15
A16
BYTE
I/O15/A-1
VSS
1
2
3456
CBGA Top View (Ball Down)
A
B
C
D
E
F
1
234567
A13
A14
A15
A16
VCCQ
GND
A11
A10
A12
I/O14
I/O15
I/O7
A8
WE
A9
I/O5
I/O6
I/O13
VPP
RST
I/O11
I/O12
I/O4
A18
I/O2
I/O3
VCC
A19
A17
A6
I/O8
I/O9
I/O10
A7
A5
A3
CE
I/O0
I/O1
A4
A2
A1
A0
GND
OE
8
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
RESET
VPP*
NC*
RDY/BUSY
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
BYTE
GND
I/O15/A-1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
TSOP Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
VPP
NC
A19
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
VCCQ
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
AT49BV1604A(T)
AT49BV/LV1614A(T)
3
AT49BV1604A(T)/1614A(T)
1411FFLASH03/02
The device powers on in the read mode. Command sequences are used to place the device in
other operation modes such as program and erase. The device has the capability to protect
the data in any sector (see Sector Lockdown section).
The device is segmented into two memory planes. Reads from memory plane B may be per-
formed even while program or erase functions are being executed in memory plane A and vice
versa. This operation allows improved system performance by not requiring the system to wait
for a program or erase operation to complete before a read is performed. To further increase
the flexibility of the device, it contains an Erase Suspend feature. This feature will put the
erase on hold for any amount of time and let the user read data from or program data to any of
the remaining sectors within the same memory plane. There is no reason to suspend the
erase operation if the data to be read is in the other memory plane. The end of a program or
an erase cycle is detected by the Ready/Busy
pin, Data Polling or by the toggle bit.
The VPP pin provides faster program/erase times. With V
PP
at 5.0V or 12.0V, the program and
erase operations are accelerated.
A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement
of entering the three-byte program sequence is offered to further improve programming time.
After entering the six-byte code, only single pulses on the write control lines are required for
writing into the device. This mode (Single Pulse Byte/Word Program) is exited by powering
down the device, or by pulsing the RESET
pin low for a minimum of 500 ns and then bringing
it back to V
CC
. Erase and Erase Suspend/Resume commands will not work while in this mode;
if entered they will result in data being programmed into the device. It is not recommended that
the six-byte code reside in the software of the final product but only exist in external program-
ming code.
When using the AT49BV1604A(T) pinout configuration, the device always operates in the
word mode. In the AT49BV/LV1614A(T) configuration, the BYTE
pin controls whether the
device data I/O pins operate in the byte or word configuration. If the BYTE
pin is set at logic
1, the device is in word configuration, I/O0 - I/O15 are active and controlled by CE
and OE.
If the BYTE
pin is set at logic 0, the device is in byte configuration, and only data I/O pins
I/O0 - I/O7 are active and controlled by CE
and OE. The data I/O pins I/O8 - I/O14 are tri-
stated, and the I/O15 pin is used as an input for the LSB (A-1) address function.

AT49BV1614AT-90TI

Mfr. #:
Manufacturer:
Description:
IC FLASH 16M PARALLEL 48TSOP
Lifecycle:
New from this manufacturer.
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