BUK9840-55/CUX Datasheet BUK9840-55/CUX, BUK9840-55,115 | P4-P6

NXP Semiconductors

BUK9840-55

N-channel TrenchMOS logic level FET

Product data sheet 16 March 2016 3 / 11

Symbol Parameter Conditions Min Max Unit

I

DM

peak drain current T

sp

= 25 °C; pulsed - 40 A

T

stg

storage temperature -55 150 °C

T

j

junction temperature -55 150 °C

Source-drain diode

I

S

source current T

sp

= 25 °C - 10.7 A

I

SM

peak source current pulsed; T

sp

= 25 °C - 40 A

Avalanche ruggedness

E

DS(AL)S

non-repetitive drain-source

avalanche energy

I

D

= 3.6 A; V

sup

≤ 25 V; R

GS

= 50 Ω;

V

GS

= 5 V; T

j(init)

= 25 °C; unclamped

- 60 mJ

Electrostatic discharge

V

esd

electrostatic discharge voltage HBM; C = 100 pF; R = 1.5 kΩ - 2 kV

40

60

20

80

100

I

D

(%)

0

T

mb

(°C)

0 16012040 80

003aaf254

V

GS

≥ 10 V

Fig. 1. Normalized continuous drain current as a

function of solder point temperature

V

DS

(V)

10

- 1

10

2

101

003aaf255

10

1

10

2

I

DM

(A)

10

- 1

R

DS(on)

= V

DS

/ I

D

D.C.

t

p

= 1 µs

100 ms

1 ms

10 ms

10 µs

100 µs

T

sp

= 25 °C; I

DM

is single pulse

Fig. 2. Safe operating area; continuous and peak drain

currents as a function of drain-source voltage

NXP Semiconductors

BUK9840-55

N-channel TrenchMOS logic level FET

Product data sheet 16 March 2016 4 / 11

003aaf267

T

(mb)

(°C)

20 16012080 14010040 60

40

60

20

80

100

WDSS

(%)

0

I

D

= 3.6 A

Fig. 3. Normalised drain-source non-repetitive

avalanche energy rating; avalanche energy as a

function of mounting base temperature

40

60

20

80

100

P

der

(%)

0

T

mb

(°C)

0 16012040 80

003aaf253

Fig. 4. Normalized total power dissipation as a

function of solder point temperature

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-sp)

thermal resistance

from junction to solder

point

Mounted on any printed-circuit board - 12 15 K/W

R

th(j-a)

thermal resistance

from junction to

ambient

Mounted on a printed-circuit - 120 - K/W

003aaf256

10

- 1

1

10

2

Z

th(j-mb)

(K/W)

10

- 2

t

p

(s)

10

- 6

10110

- 1

10

- 5

10

- 2

10

- 3

10

- 4

0.2

0

δ = 0.5

t

p

t

p

T

P

t

T

δ =

0.02

0.05

0.1

Fig. 5. Transient thermal impedance from junction to solder point as a function of pulse duration

NXP Semiconductors

BUK9840-55

N-channel TrenchMOS logic level FET

Product data sheet 16 March 2016 5 / 11

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

I

D

= 0.25 mA; V

GS

= 0 V; T

j

= 25 °C 55 - - VV

(BR)DSS

drain-source

breakdown voltage

I

D

= 0.25 mA; V

GS

= 0 V; T

j

= -55 °C 50 - - V

I

D

= 1 mA; V

DS

= V

GS

; T

j

= 150 °C 0.6 - - V

I

D

= 1 mA; V

DS

= V

GS

; T

j

= -55 °C - - 2.3 V

V

GS(th)

gate-source threshold

voltage

I

D

= 1 mA; V

DS

= V

GS

; T

j

= 25 °C 1 1.5 2 V

V

DS

= 55 V; V

GS

= 0 V; T

j

= 150 °C - - 100 µAI

DSS

drain leakage current

V

DS

= 55 V; V

GS

= 0 V; T

j

= 25 °C - 0.05 10 µA

V

GS

= 5 V; V

DS

= 0 V; T

j

= 25 °C - 0.02 1 µA

V

GS

= -5 V; V

DS

= 0 V; T

j

= 25 °C - 0.02 1 µA

V

GS

= 5 V; V

DS

= 0 V; T

j

= 150 °C - - 5 µA

I

GSS

gate leakage current

V

GS

= -5 V; V

DS

= 0 V; T

j

= 150 °C - - 5 µA

V

GS

= 5 V; I

D

= 5 A; T

j

= 150 °C - - 74 mΩR

DSon

drain-source on-state

resistance

V

GS

= 5 V; I

D

= 5 A; T

j

= 25 °C - 30 40 mΩ

V

DS

= 0 V; T

j

= 25 °C; I

G

= 1 mA 10 - - VV

(BR)GSS

gate-source

breakdown voltage

V

DS

= 0 V; T

j

= 25 °C; I

G

= -1 mA 10 - - V

Dynamic characteristics

C

iss

input capacitance - 1050 1400 pF

C

oss

output capacitance - 205 245 pF

C

rss

reverse transfer

capacitance

V

GS

= 0 V; V

DS

= 25 V; f = 1 MHz;

T

j

= 25 °C

- 110 150 pF

t

d(on)

turn-on delay time - 17 25 ns

t

r

rise time - 65 100 ns

t

d(off)

turn-off delay time - 70 105 ns

t

f

fall time

V

DS

= 30 V; R

L

= 3.3 Ω; V

GS

= 5 V;

R

G(ext)

= 10 Ω; T

j

= 25 °C; I

D

= 9 A

- 70 105 ns

g

fs

transfer conductance V

DS

= 25 V; I

D

= 5 A; T

j

= 25 °C 11 19 - S

Source-drain diode

V

SD

source-drain voltage I

S

= 5 A; V

GS

= 0 V; T

j

= 25 °C - 0.85 1.1 V

t

rr

reverse recovery time - 45 - ns

Q

r

recovered charge

I

S

= 5 A; dI

S

/dt = -100 A/µs;

V

GS

= -10 V; V

DS

= 30 V; T

j

= 25 °C

- 0.3 - µC

BUK9840-55/CUX

BUK9840-55/CUX

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