NXP Semiconductors
BUK9840-55
N-channel TrenchMOS logic level FET
BUK9840-55 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved
Product data sheet 16 March 2016 6 / 11
0
15
10
5
20
I
D
(A)
V
DS
(V)
0 1084 62
003aaf257
V
GS
(V) = 3.4
3.2
2.6
3.0
2.8
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
40
60
80
R
DS(on)
(mΩ)
20
I
D
(A)
0 252010 155
003aaf258
V
GS
(V) = 3.0
3.2
3.4
3.6
4.0
5.0
T
j
= 25 °C
Fig. 7. Drain-source on-state resistance as a function
of drain current; typical values
0
15
10
5
20
I
D
(A)
V
GS
(V)
0 431 2
003aaf259
T
j
= 25 °CT
j
= 150 °C
V
DS
> I
D
x R
DSon
Fig. 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
5
20
15
10
25
g
fs
(S)
I
D
(A)
0 20168 124
003aaf260
Fig. 9. Forward transconductance as a function of
drain current; typical values
T
mb
(°C)
- 100 2001000
003aaf261
1.0
1.5
2.0
a
0.5
Fig. 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaf262
T
j
(°C)
- 100 2001000
0.5
2.0
1.5
1.0
2.5
V
GS(th)
(V)
maximum
typical
minimum
I
D
= 1 mA; V
DS
= V
GS
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
