IRF640S, SiHF640S, SiHF640L
www.vishay.com
Vishay Siliconix
S16-0014-Rev. E, 18-Jan-16
1
Document Number: 91037
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Surface mount
• Low-profile through-hole
• Available in tape and reel
• Dynamic dV/dt rating
• 150 °C operating temperature
• Fast switching
• Fully avalanche rated
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combinations of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the last lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (SiHF640L) is available for low-profile
applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 2.7 mH, R
g
= 25 , I
AS
= 18 A (see fig. 12).
c. I
SD
18 A, dI/dt 150 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRF640, SiHF640 data and test conditions.
PRODUCT SUMMARY
V
DS
(V) 200
R
DS(on)
()V
GS
= 10 V 0.18
Q
g
max. (nC) 70
Q
gs
(nC) 13
Q
gd
(nC) 39
Configuration Single
D
2
PAK (TO-263)
G
D
S
I
2
PAK (TO-262)
G
D
S
Available
Available
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263) D
2
PAK (TO-263) I
2
PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHF640S-GE3 SiHF640STRL-GE3
a
SiHF640STRR-GE3
a
SiHF640L-GE3
Lead (Pb)-free IRF640SPbF IRF640STRLPbF
a
IRF640STRRPbF
a
-
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
200
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
18
AT
C
= 100 °C 11
Pulsed Drain Current
a, e
I
DM
72
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
b, e
E
AS
580 mJ
Avalanche Current
a
I
AR
18 A
Repetitive Avalanche Energy
a
E
AR
13 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
130
W
T
A
= 25 °C 3.1
Peak Diode Recovery dV/dt
c, e
dV/dt 5.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak temperature)
d
for 10 s 300