IRF640S, SiHF640S, SiHF640L
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Vishay Siliconix
S16-0014-Rev. E, 18-Jan-16
4
Document Number: 91037
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 10 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
1
10
0
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.50
1.30
1.100.900.70
25 °C
150 °C
V
GS
= 0 V
91037_07
1.50
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
2
0.1
2
5
0.1
2
5
1
2
5
10
2
5
25
1
25
10
25
10
2
2
5
10
3
91037_08
10
3
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
0
4
8
12
16
20
25 1501251007550
91037_09
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
g
D.U.T.
10 V
+
-
V
DS
V
DD
10
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1 1 10
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
Single Pulse
(Thermal Response)
0 − 0.5
0.2
0.1
0.05
0.02
0.01
91037_11
10
-3
