March 2010 Doc ID 9983 Rev 5 1/14
14
STGW20NC60VD
30 A, 600 V, very fast IGBT
Features
High current capability
High frequency operation up to 50 KHz
Very soft ultra fast recovery antiparallel diode
Description
This IGBT utilizes the advanced Power MESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Applications
High frequency inverters, UPS
Motor drive
SMPS and PFC in both hard switch and
resonant topologies
Figure 1. Internal schematic diagram
1
2
3
TO-247
Table 1. Device summary
Order code Marking Package Packaging
STGW20NC60VD GW20NC60VD TO-247 Tube
www.st.com
Contents STGW20NC60VD
2/14 Doc ID 9983 Rev 5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STGW20NC60VD Electrical ratings
Doc ID 9983 Rev 5 3/14
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0)
600 V
I
C
(1)
1. Calculated according to the iterative formula:
Continuous collector current at Tc= 25°C 60 A
I
C
(1)
Continuous collector current at Tc= 100°C 30 A
I
CP
(2)
2. Pulse width limited by maximum junction temperature and turn-off within RBSOA.
Pulsed collector current 150 A
I
CL
(3)
3. V
clamp
= 80 % V
CES
, T
J
= 150 °C, R
G
= 10 , V
GE
= 15 V.
Turn-off latching current 100 A
V
GE
Gate-emitter voltage ± 20 V
I
F
Diode RMS forward current at Tc=25°C 30 A
I
FSM
Surge not repetitive forward current
tp = 10 ms sinusoidal
120 A
P
TOT
Total dissipation at T
C
= 25°C
200 W
T
j
Operating junction temperature
– 55 to 150 °C
T
stg
Storage temperature
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case IGBT 0.63 °C/W
Thermal resistance junction-case diode 1.5 °C/W
R
thj-amb
Thermal resistance junction-ambient 50 °C/W
I
C
T
C
()
T
jmax()
T
C
R
thj c
V
CE sat()max()
T
jmax()
I
C
T
C
(),()×
----------------------------------------------------------------------------------------------------------=

STGW20NC60VD

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N-Ch 600 Volt 30 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet