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STGW20NC60VD
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
Electrical ch
aracteristics
STGW20NC60VD
4/14
Do
c ID 9983 Re
v 5
2 Electrical
characteristics
(T
j
=25°C unless otherwise specified)
T
able 4.
Static
Symbol
P
arameter
T
est co
nditions
Min.
T
yp.
Max.
Unit
V
(BR)CES
Collector-
emitter breakd
own
voltage (V
GE
= 0)
I
C
= 1 mA
600
V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
=15 V
, I
C
=20 A
V
GE
=15 V
, I
C
=20 A,T
j
=125 °C
1.8
1.7
2.5
V
V
V
GE(th)
Gate threshold v
oltage
V
CE
= V
GE
, I
C
= 250 µA
3.75
5.75
V
I
CES
Collector-cut-off
current
(V
GE
= 0)
V
CE
= 600 V
V
CE
=600 V
, T
j
= 125 °C
250
1
µA
mA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ± 20V
±100
nA
g
fs
F
orward transconductance
V
CE
= 15 V
,
I
C
= 20 A
15
S
T
able 5.
Dynamic
Symbol
Pa
rameter
T
est conditions
Min.
T
yp.
Max
Unit
C
ies
C
oes
C
res
Input capacitance
Output capacitance
Re
vers
e transf
er
capacitance
V
CE
= 25V
, f = 1 MHz, V
GE
= 0
-
2200
225
50
pF
pF
pF
Q
g
Q
ge
Q
gc
T
otal gate char
ge
Gate-emitter charge
Gate-collector charge
V
CE
= 390V
, I
C
= 20A,
V
GE
= 15V
,
(see Figure 18)
-
100
16
45
140
nC
nC
nC
STGW20NC60VD
Electrical character
istics
Doc ID 9983 Rev 5
5/14
T
able 6.
Switchi
ng on/off (inducti
ve load)
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max.
Unit
t
d(on)
t
r
(di/dt)
onf
T
ur
n-on dela
y time
Current rise time
T
ur
n-on current slope
V
CC
=390 V
, I
C
= 20 A,
R
G
=3.3
Ω,
V
GE
=15V
(see Figure
17)
-
31
11
1600
-
ns
ns
A/µs
t
d(on)
t
r
(di/dt)
on
T
ur
n-on dela
y time
Current rise time
T
ur
n-on current slope
V
CC
=390 V
, I
C
= 20 A,
R
G
=3.3
Ω,
V
GE
=15 V
T
j
=125°C
(see Figure
17)
-
31
11.5
1500
-
ns
ns
A/µs
t
r(V
off)
t
d(off)
t
f
Off v
oltage rise time
T
ur
n-off dela
y time
Current fall time
V
CC
=390 V
, I
C
= 20 A,
R
G
=3.3
Ω,
V
GE
=15 V
(see Figure
17)
-
28
100
75
-
ns
ns
ns
t
r(V
off)
t
d(off)
t
f
Off v
oltage rise time
T
ur
n-off dela
y time
Current fall time
V
CC
=390 V
, I
C
= 20 A,
R
G
=3.3
Ω,
V
GE
=15 V
T
j
=125°C
(see Figure
17)
-
66
150
130
-
ns
ns
ns
T
able 7.
Switching ener
gy (induc
tive load)
Symbol
Parameter
T
est co
nd
itions
Min
T
yp.
Max
Unit
E
on
(1)
E
off
E
ts
1.
Eon is the turn-on losses
when a typical diode is used in the test circuit in
Figure
19
. Eon include diode
recovery energy. If the IGBT is offered in a packa
ge with a co-pak diode, the co-pa
ck diode is used as
external diode. IGBTs & Diode are at
the same temperature (25°C and 125°C).
T
ur
n-on s
witching losses
T
ur
n-off s
witching losses
T
otal switching losses
V
CC
=390 V
, I
C
= 20 A,
R
G
=3.3
Ω,
V
GE
=15 V
,
(see Figure 19)
-
220
330
550
300
450
750
µJ
µJ
µJ
E
on
(1)
E
off
E
ts
T
ur
n-on s
witching losses
T
ur
n-off s
witching losses
T
otal switching losses
V
CC
=390 V
, I
C
= 20 A,
R
G
=3.3
Ω,
V
GE
=15 V
,
Tj= 125°C
(see Figure 19)
-
450
770
1220
µJ
µJ
µJ
Electrical ch
aracteristics
STGW20NC60VD
6/14
Do
c ID 9983 Re
v 5
T
able 8.
Collector
-emitte
r diode
Symbol
Parameter
T
est conditions
Min
T
yp.
Max
Unit
V
F
F
orward on-voltage
I
F
= 20 A
I
F
= 20 A, T
j
= 125°C
-
2
1.6
-
V
V
t
rr
Q
rr
I
rrm
Re
verse reco
very time
Re
verse reco
very charge
Re
verse reco
very current
I
F
= 20 A, V
R
= 40 V
,
T
j
= 25°C,
di/dt =
100 A/µs
(see Figure 20)
-
44
66
3
-
ns
nC
A
t
rr
Q
rr
I
rrm
Re
verse reco
very time
Re
verse reco
very charge
Re
verse reco
very current
I
F
= 2 0A,
V
R
= 40 V
,
T
j
= 125°C,
di/dt =100 A/µs
(see Figure 20)
-
88
237
5.4
-
ns
nC
A
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
STGW20NC60VD
Mfr. #:
Buy STGW20NC60VD
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N-Ch 600 Volt 30 Amp
Lifecycle:
New from this manufacturer.
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