BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 3 of 12
NXP Semiconductors
BAT46WJ
Single Schottky barrier diode
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[3] Reflow soldering is the only recommended soldering method.
[4] Soldering point of cathode tab.
R
th(j-sp)
thermal resistance from
junction to solder point
[4]
--35K/W
Table 6. Thermal characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for cathode 1 cm
2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac385
10
5
1010
2
10
4
10
2
10
1
t
p
(s)
10
3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
006aac386
10
5
1010
2
10
4
10
2
10
1
t
p
(s)
10
3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 4 of 12
NXP Semiconductors
BAT46WJ
Single Schottky barrier diode
7. Characteristics
[1] Pulse test: t
p
300 s; 0.02.
[2] When switched from I
F
= 10 mA to I
R
=10mA; R
L
= 100 ; measured at I
R
=1mA.
Table 7. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage
[1]
I
F
= 0.1 mA - 175 200 mV
I
F
= 10 mA - 315 350 mV
I
F
=10mA; T
j
= 40 C - - 470 mV
I
F
= 50 mA - 415 475 mV
I
F
=50mA; T
j
= 40 C - - 560 mV
I
F
= 250 mA - 710 850 mV
I
R
reverse current
[1]
V
R
= 1.5 V - 0.2 0.5 A
V
R
= 1.5 V; T
j
=60C --12A
V
R
=10V - 0.3 0.8 A
V
R
=10V; T
j
=60C --20A
V
R
=50V - 0.7 2 A
V
R
=50V; T
j
=60C --44A
V
R
=75V - 1 4 A
V
R
=75V; T
j
=60C --80A
V
R
=100V - 2 9 A
V
R
=100V; T
j
=60C - - 120 A
V
R
=100V; T
j
=85C - - 600 A
C
d
diode capacitance f = 1 MHz
V
R
=0V --39pF
V
R
=1V --21pF
t
rr
reverse recovery time
[2]
-5.9-ns
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 5 of 12
NXP Semiconductors
BAT46WJ
Single Schottky barrier diode
(1) T
amb
= 150 C
(2) T
amb
= 125 C
(3) T
amb
=85C
(4) T
amb
=25C
(5) T
amb
= 40 C
(1) T
amb
= 125 C
(2) T
amb
=85C
(3) T
amb
=60C
(4) T
amb
=25C
(5) T
amb
= 40 C
Fig 3. Forward current as a function of forward
voltage; typical values
Fig 4. Reverse current as a function of reverse
voltage; typical values
f=1MHz; T
amb
=25C
Fig 5. Diode capacitance as a function of reverse voltage; typical values
V
R
(V)
0 1008040 6020
006aac389
35
C
d
(pF)
25
15
5
0
10
20
30

BAT46WJ,115

Mfr. #:
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers Schottky Diodes 100V 250mA Single
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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