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LC05112C01MTTTG

P1-P3P4-P6P7-P9P10-P12P13-P15
1 Publication Order Number :
LC05112CMT/D
www.onsemi.com
© Semiconductor Components Industries, LLC, 2016
Nobember 2016 - Rev. 2
ORDERING INFORMATION
See detailed ordering and shipping information on page 15 of this data sheet.
LC05112CMT
Overview
The LC05112CMT is a protection IC for 1-cell lithium-ion secondary
batteries with integrated power MOS FET. Also it integrates highly
accurate detection circuits and detection delay circuits to prevent batteries
from over-charging, over-discharging, over-current discharging and
over-current charging.
A battery protection system can be made by only LC05112CMT and
few external parts..
Feature
Charge-and-discharge power MOSFET are integrated at Ta = 25C, V
CC
= 4.5V
ON resistance (total of charge and discharge) 11.2m (typ)
Highly accurate detection voltage/current at Ta = 25C, V
CC
= 3.7V
Over-charge detection ±25mV
Over-discharge detection ±50mV
Charge over-current detection ±0.7A
Discharge over-current detection ±0.7A
Delay time for detection and release (fixed internally)
Discharge/Charge over-current detection is compensated for temperature dependency of power FET.
0V battery charging : “Unavailable”
Over charge detection voltage : 4.0V to 4.5V (5mV steps)
Over charge release hysteresis : 0V to 0.3V (100mV steps)
Over discharge detection voltage : 2.2V to 2.8V (50mV steps)
Over discharge release hysteresis : 0V to 0.075V (25mV steps)
Discharge over current detection : 2.0A to 8.0A (0.5A steps)
Charge over current detection : 8.0A to -2.0A (0.5A steps)
Over-discharge detection delay time : 20ms or 128ms
Typical Applications
Smart phone
Tablet
Wearable device
CMOS LSI
1-Cell Lithium-Ion Battery
Protection IC with integrated
Power MOS FET
WDFN6 2.6x4.0, 0.65P, Dual Flag
LC05112CMT
www.onsemi.com
2
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Symbol
Ratings Unit Conditions
Supply voltage
V
CC
-0.3-12.0 V
Between PAC+ and V
CC
: R1=680
S1 - S2 voltage VS1-S2 24.0 V
CS terminal Input voltage
CS
V
CC
24.0
V
Charge or discharge current BAT-, PAC- 10.0 A
TST Input voltage TST -0.3-7 V
Storage temperature Tstg
55 to +125 C
Current between S1 and
S2(DC)
ID 10.0 A
V
CC
= 3.7V
Current between S1 and S2
(continuous pulse)
IDP 35 A
Pulse Width<10s, duty cycle<1%
Operating ambient temperature Topr
40 to +85 C
Allowable power dissipation Pd 350 mW
Glass epoxy four-layer board.
Board size 27.4mm x 3.1mm x 0.8mm
Junction temperature Tj 125
C
Caution 1) Absolute maximum ratings represent the values which cannot be exceeded even for a moment.
Caution 2) If you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature
change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of
decrease reliability. Please contact us for a confirmation.
Example of Application Circuit
Components
Recommended
value
MAX unit Description
R1 680 1k
R2 1k 2k
C1
2.2
4.7u F
* We don’t guarantee the characteristics of the circuit shown above.
* TST pin would be better to be connected to VSS pin, though it is connected to VSS with internal resistor (100k typ).
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
LC05112CMT
www.onsemi.com
3
Electrical Characteristics at Ta = 25C, unless otherwise specified.
Parameter Symbol MIN. TYP. MAX. Unit Conditions
Detection voltage
Over-charge detection voltage Vov Vov_set -25 Vov_set Vov_set +25 mV R1=680ohm
Over-charge release voltage Vovr Vovr_set -40 Vovr_set Vovr_set +40 mV R1=680ohm
Over-discharge detection voltage Vuv Vuv_set -50 Vuv_set Vuv_set +50 mV R1=680ohm
Over-discharge release voltage
Vuvr Vuvr_set -100 Vuvr_set Vuvr_set +100 mV R1=680ohm, CS=0V
Discharge over-current
detection current
Ioc Ioc_set -0.7 Ioc_set Ioc_set +0.7 A
R2=1k, VCC=3.7V,Pulse input
Discharge over-current
release current
Iocr Ioc_set-0.7 Ioc_set Ioc_set+0.7 A
R2=1k, VCC=3.7V,Pulse input
Discharge over-current
detection current (Short circuit)
Ioc2 14.7 21.0 27.3 A
R2=1k, VCC=3.7V,Pulse input
Charge over-current detection
current
Ioch Ioch_set -0.7 Ioch_set Ioch_set +0.7 A
R2=1k, VCC=3.7V,Pulse input
Charge over-current release
current
Iochr Ioch_set-0.7 Ioch_set Ioch_set+0.7 A
R2=1k, VCC=3.7V,Pulse input
Input voltage
0 V battery charge inhibition
battery voltage
Vinh 0.4 0.9 1.4 V
Current consumption
Operating current Icc 3.0 6.0
A
At normal state,VCC=3.7V
Shutt down current Ishutt 0.1
A
At Shutt down state,VCC=2.0V
Resistance
ON resistance 1 of
integrated power MOS FET
Ron1 10.4 13.0 18.2
m
VCC=3.1V
I=±2.0A
ON resistance 2 of
integrated power MOS FET
Ron2 9.6 12.0 15.6
m
VCC=3.7V
I=±2.0A
ON resistance 3 of
integrated power MOS FET
Ron3 9.2 11.6 15.0
m
VCC=4.0V
I=±2.0A
ON resistance 4 of
integrated power MOS FET
Ron4 8.8 11.2 14.0
m
VCC=4.5V
I=±2.0A
Internal resistance (VCC-CS) Rcsu 300
k
VCC=2.0V, CS=0V
Internal resistance (VSS-CS) Rcsd 15
k
VCC=3.7V, CS=1.0V
Detection and Release delay time
Over-charge detection delay time Tov 0.8 1.0 1.2 sec VCC=3.7V
Over-charge release delay time Tovr 12.8 16.0 19.2 ms VCC=3.7V
Over-discharge detection delay
time
Tuv
102 128 154
ms VCC=3.7V
16 20 24
Over-discharge release delay
time
Tuvr 0.9 1.1 1.3 ms VCC=3.7V
Discharge over-current
detection delay time 1
Toc1 9.6 12.0 14.4 ms VCC=3.7V
Discharge over-current
release delay time 1
Tocr1 3.2 4.0 4.8 ms VCC=3.7V
Discharge over-current
detection delay time 2 (Short
circuit)
Toc2 80 200 320 us VCC=3.7V
Charge Over-current
detection delay time
Toch 12.8 16.0 19.2 ms VCC=3.7V
Charge Over-current
release delay time
Tochr 3.2 4.0 4.8 ms VCC=3.7V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
P1-P3P4-P6P7-P9P10-P12P13-P15

LC05112C01MTTTG

Mfr. #:
Buy LC05112C01MTTTG
Manufacturer:
ON Semiconductor
Description:
Battery Management 1 CELL LIB PROTECTIO
Lifecycle:
New from this manufacturer.
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