Data Sheet SSM2220
Rev. C | Page 3 of 12
SPECIFICATIONS
T
A
= 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
CURRENT GAIN
1
h
FE
V
CB
= 0 V to 36 V
80 165 I
C
= 1 mA
70 150 I
C
= 100 μA
60 120 I
C
= 10 μA
Current Gain Matching
2
Δh
FE
0.5 6 % I
C
= 100 μA, V
CB
= 0 V
NOISE VOLTAGE DENSITY
3
e
n
I
C
= 1 mA, V
CB
= 0 V
0.8 2 nV/√Hz f
O
= 10 Hz
0.7 1 nV/√Hz f
O
= 100 Hz
0.7 1 nV/√Hz f
O
= 1 kHz
0.7 1 nV/√Hz f
O
= 10 kHz
OFFSET VOLTAGE
4
V
OS
40 200 μV V
CB
= 0 V, I
C
= 100 μA
Offset Voltage Change vs. Collector Voltage ΔV
OS
/ΔV
CB
11 200 μV I
C
= 100 μA, V
CB1
= 0 V, V
CB2
= −36 V
Offset Voltage Change vs. Collector Current ΔV
OS
/ΔI
C
12 75 μV V
CB
= 0 V, I
C1
= 10 μA, I
C2
= 1 mA
OFFSET CURRENT I
OS
6 45 nA I
C
= 100 μA, V
CB
= 0 V
COLLECTOR TO BASE LEAKAGE CURRENT I
CBO
50 400 pA V
CB
= −36 V = V
MAX
BULK RESISTANCE r
BE
0.3 0.75 Ω V
CB
= 0 V, 10 μA ≤ I
C
≤ 1 mA
COLLECTOR SATURATION VOLTAGE V
CE(SAT)
0.026 0.1 V I
C
= 1 mA, I
B
= 100 μA
1
Current gain is measured at collector to base voltages (V
CB
) swept from 0 V to V
MAX
at indicated collector current. Typicals are measured at V
CB
= 0 V.
2
Current gain matching (Δh
FE
) is defined as follows:
Δh
FE
=
3
Sample tested. Noise tested and specified as equivalent input voltage for each transistor.
4
Offset voltage is defined as follows:
V
OS
= V
BE1
– V
BE2
=
C2
C1
I
I
q
KT
ln
where V
OS
is the differential voltage for I
C1
= I
C2
.
ELECTRICAL CHARACTERISTICS
−40°C ≤ T
A
≤ +85°C, unless otherwise noted.
Table 2.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
CURRENT GAIN h
FE
V
CB
= 0 V to 36 V
60 125 I
C
= 1 mA
50 105 I
C
= 100 μA
C
OFFSET VOLTAGE V
OS
30 265 μV I
C
= 100 μA, V
CB
= 0 V
Offset Voltage Drift
1
TCV
OS
0.3 1.0 μV/°C I
C
= 100 μA, V
CB
= 0 V
OFFSET CURRENT I
OS
10 200 nA I
C
= 100 μA, V
CB
= 0 V
BREAKDOWN VOLTAGE (COLLECTOR TO EMITTER) BV
CEO
36 V
1
Guaranteed by V
OS
test (TCV
OS
= V
OS
/T for V
OS
<< V
BE
), where T = 298K for T
A
= 25°C.
