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IRF7524D1GTRPBF

P1-P3P4-P6P7-P8
IRF7524D1GPbF
Description
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l P-Channel HEXFET
l Low V
F
Schottky Rectifier
l Generation 5 Technology
l Micro8
TM
Footprint
l Lead-Free
l Halogen-Free
V
DSS
= -20V
R
DS(on)
= 0.27Ω
Schottky Vf = 0.39V
FETKY
MOSFET & Schottky Diode
TM
Micro8
TM
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
I
SD
≤ -1.2A, di/dt ≤ 100A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
09/16/08
Top View
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
www.irf.com 1
The FETKY
TM
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8
TM
package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8
TM
an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8
TM
will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Maximum Units
R
θJA
Junction-to-Ambient 100 °C/W
Thermal Resistance Ratings
Parameter Maximum Units
I
D
@ T
A
= 25°C -1.7
I
D
@ T
A
= 70°C -1.4
I
DM
Pulsed Drain Current -14
P
D
@T
A
= 25°C 1.25
P
D
@T
A
= 70°C 0.8
Linear Derating Factor 10 mW/°C
V
GS
Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to +150 °C
Continuous Drain Current, V
GS
@ -4.5V
Power Dissipation
A
W
PD -96176
IRF7524D1GPbF
2 www.irf.com
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -20 ––– ––– V V
GS
= 0V, I
D
= -250µA
––– 0.17 0.27 V
GS
= -4.5V, I
D
= -1.2A
––– 0.28 0.40 V
GS
= -2.7V, I
D
= -0.60A
V
GS(th)
Gate Threshold Voltage -0.70 ––– ––– V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 1.3 ––– ––– S V
DS
= -10V, I
D
= -0.60A
––– ––– -1.0 V
DS
= -16V, V
GS
= 0V
––– ––– -25 V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -12V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 12V
Q
g
Total Gate Charge ––– 5.4 8.2 I
D
= -1.2A
Q
gs
Gate-to-Source Charge ––– 0.96 1.4 nC V
DS
= -16V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 2.4 3.6 V
GS
= -4.5V, See Fig. 6
t
d(on)
Turn-On Delay Time ––– 9.1 ––– V
DD
= -10V
t
r
Rise Time ––– 35 ––– I
D
= -1.2A
t
d(off)
Turn-Off Delay Time ––– 38 ––– R
G
= 6.0Ω
t
f
Fall Time ––– 43 ––– R
D
= 8.3Ω,
C
iss
Input Capacitance ––– 240 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 130 ––– pF V
DS
= -15V
C
rss
Reverse Transfer Capacitance ––– 64 ––– ƒ = 1.0MHz, See Fig. 5
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
I
GSS
Ω
µA
nA
ns
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current(Body Diode) ––– ––– -1.25
I
SM
Pulsed Source Current (Body Diode) ––– ––– -9.6
V
SD
Body Diode Forward Voltage ––– ––– -1.2 V T
J
= 25°C, I
S
= -1.2A, V
GS
= 0V
t
rr
Reverse Recovery Time (Body Diode) ––– 52 78 ns T
J
= 25°C, I
F
= -1.2A
Q
rr
Reverse Recovery Charge ––– 63 95 nC di/dt = 100A/µs
A
MOSFET Source-Drain Ratings and Characteristics
Parameter Max. Units Conditions
I
F(av)
Max. Average Forward Current 1.9 50% Duty Cycle. Rectangular Wave, T
A
= 25°C
1.4 Fig.14 T
A
= 70°C
I
SM
Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &
with V
RRM
applied
A
A
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
V
FM
Max. Forward voltage drop 0.50 I
F
= 1.0A, T
J
= 25°C
0.62 I
F
= 2.0A, T
J
= 25°C
0.39 I
F
= 1.0A, T
J
= 125°C
0.57 I
F
= 2.0A, T
J
= 125°C .
I
RM
Max. Reverse Leakage current 0.02 V
R
= 20V T
J
= 25°C
8 T
J
= 125°C
C
t
Max. Junction Capacitance 92 pF V
R
= 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated V
R
Schottky Diode Electrical Specifications
V
mA
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
See
IRF7524D1GPbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
I = -1.2A
V = -4.5V
D
GS
0.01
0.1
1
10
0.1 1 10
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.01
0.1
1
10
0.1 1 10
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
Power Mosfet Characteristics
P1-P3P4-P6P7-P8

IRF7524D1GTRPBF

Mfr. #:
Buy IRF7524D1GTRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT PCh w/Schttky -1.7A 270mOhm 5.4nC
Lifecycle:
New from this manufacturer.
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