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IRF7524D1GTRPBF

P1-P3P4-P6P7-P8
IRF7524D1GPbF
4 www.irf.com
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
0
100
200
300
400
500
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0246810
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
I = -1.2A
V = -16V
FOR TEST CIRCUIT
SEE FIGURE 9
D
DS
0.01
0.1
1
10
0.4 0.6 0.8 1.0 1.2
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
0.1
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 25°C
T = 150°C
Single Pulse
-I , Drain Current (A)
-V , Drain-to-Source Voltage (V)
DS
D
A
J
100µs
1ms
10ms
Power Mosfet Characteristics
IRF7524D1GPbF
www.irf.com 5
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical On-Resistance Vs. Drain
Current
Fig 11. Typical On-Resistance Vs. Gate
Voltage
Power Mosfet Characteristics
0.0 0.5 1.0 1.5 2.0
0.0
0.2
0.4
0.6
0.8
1.0
R , Drain-to-Source On Resistance
-I , Drain Current (A)
D
DS (on)
VGS = -2.5V
VGS = -5.0V
R
DS
(on) , Drain-to-Source On Resistance (Ω)
2 3 4 5 6 7 8
0.100
0.150
0.200
0.250
0.300
R , Drain-to-Source On Resistance
-V , Gate-to-Source Voltage (V)
GS
DS (on)
ID = -1.7A
R
DS
(on) , Drain-to-Source On Resistance (Ω)
IRF7524D1GPbF
6 www.irf.com
Schottky Diode Characteristics
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
Reverse Current - I
R
(mA)
Fig. 12 -Typical Forward Voltage Drop
Characteristics
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0
FM
F
Instantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
Forward Voltage Drop - V
F
(V)
0
20
40
60
80
100
120
140
160
0.0 0.5 1.0 1.5 2.0 2.5 3.0
F(AV)
A
Average Forward Current - I (A)
Allowable Ambient Temperature - (°C)
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
DC
V = 20V
R = 100°C/W
Square wave
thJA
r
P1-P3P4-P6P7-P8

IRF7524D1GTRPBF

Mfr. #:
Buy IRF7524D1GTRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT PCh w/Schttky -1.7A 270mOhm 5.4nC
Lifecycle:
New from this manufacturer.
Delivery:
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