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TC2015-5.0VCTTR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
2001-2012 Microchip Technology Inc. DS21662F-page 1
TC2014/2015/2185
Features
• Low Supply Current: 80 µA (Max)
• Low Dropout Voltage: 140 mV (Typ.) @ 150 mA
• High-Output Voltage Accuracy: ±0.4% (Typ.)
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• Reference Bypass Input for Ultra Low-Noise
Operation
• Fast Shutdown Response Time: 60 µsec (Typ.)
• Overcurrent and Overtemperature Protection
• Space-Saving 5-Pin SOT-23A Package
• Pin-Compatible Upgrades for Bipolar Regulators
• Wide Operating Temperature Range:
-40°C to +125°C
• Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 5.0V
Applications
• Battery-Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
• Cellular/GSM/PHS Phones
• Linear Post-Regulator for SMPS
• Pagers
Related Literature
• Application Notes: AN765, AN766, AN776 and
AN792
Package Type
General Description
The TC2014, TC2015 and TC2185 are high-accuracy
(typically ±0.4%) CMOS upgrades for bipolar Low
Drop-out Regulators (LDOs), such as the LP2980.
Total supply current is typically 55 µA; 20 to 60 times
lower than in bipolar regulators.
The key features of the device include low noise oper-
ation (plus bypass reference), low dropout voltage
– typically 45 mV for the TC2014, 90 mV for the
TC2015, and 140 mV for the TC2185, at full load – and
fast response to step changes in load. Supply current
is reduced to 0.5 µA (max) and V
OUT
falls to zero when
the shutdown input is low. These devices also
incorporate overcurrent
and overtemperature
protection.
The TC2014, TC2015 and TC2185 are stable with an
output capacitor of 1 µF and have maximum output
currents of 50 mA, 100 mA and 150 mA, respectively.
For higher-output
current versions, see the TC1107
(DS21356), TC1108 (DS21357) and TC1173
(DS21362) (I
OUT
= 300 mA) data sheets.
Typical Application
TC2014
TC2015
TC2185
1
3
4
5
2
Bypass
GND
V
OUT
V
IN
SHDN
5-Pin SOT-23A
0.01 µF
Reference
Bypass Cap
(Optional)
Shutdown Control
(from Power Control Logic)
TC2014
TC2015
TC2185
V
IN
1
2
34
5
V
IN
V
OUT
Bypass
SHDN
GND
V
OUT
1µF
1µF
+
+
50 mA, 100 mA, 150 mA CMOS LDOs with
Shutdown and Reference Bypass
TC2014/2015/2185
DS21662F-page 2 2001-2012 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage................................................................... 7.0V
Output Voltage ....................................... (– 0.3) to (V
IN
+ 0.3)
Operating Temperature......................... – 40°C < T
J
< 125°C
Storage Temperature.................................. – 65°C to +150°C
Maximum Voltage on Any Pin ................ V
IN
+0.3V to – 0.3V
Maximum Junction Temperature.................................. 150°C
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
OUT
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Input Operating Voltage V
IN
2.7 — 6.0 V Note 1
Maximum Output
Current
I
OUTMAX
50 ——mATC2014
100 —— TC2015
150 —— TC2185
Output Voltage V
OUT
V
R
– 2.0% V
R
± 0.4% V
R
+ 2.0% V Note 2
V
OUT
Temperature
Coefficient
TCV
OUT
—20—ppm/°CNote 3
— 40 —
Line Regulation V
OUT
/V
IN
—0.050.5 %(V
R
+ 1V) < V
IN
< 6V
Load Regulation
(Note 4)
V
OUT
/V
OUT
-1.0 0.33 +1.0 % TC2014;TC2015:I
L
= 0.1 mA to I
OUTMAX
-2.0 0.43 +2.0 TC2185:I
L
= 0.1 mA to I
OUTMAX
(Note 4)
Dropout Voltage V
IN
– V
OUT
—2—mVNote 5 I
L
= 100 µA
—4570 I
L
= 50 mA
—90140 TC2015; TC2185 I
L
= 100 mA
— 140 210 TC2185 I
L
= 150 mA
Supply Current I
IN
—5580 µA SHDN = V
IH
, I
L
= 0
Shutdown Supply
Current
I
INSD
—0.050.5µASHDN = 0V
Power Supply
Rejection Ratio
PSRR — 55 — dB F 1 kHz, Cbypass = 0.01 µF
Output Short Circuit
Current
I
OUTSC
— 160 300 mA V
OUT
= 0V
Note 1: The minimum V
IN
has to meet two conditions: V
IN
= 2.7V and V
IN
= V
R
+ V
DROPOUT
.
2: V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3:
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the Thermal Regulation specification.
5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
MAX
at V
IN
= 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
JA
).
8: Time required for V
OUT
to reach 95% of V
R
(output voltage setting), after V
SHDN
is switched from 0 to V
IN
.
TCV
OUT
V
OUTMAX
V
OUTMIN
–10
6–
V
OUT
T
----------------------------------------------------------------------------
=
2001-2012 Microchip Technology Inc. DS21662F-page 3
TC2014/2015/2185
TEMPERATURE CHARACTERISTICS
Thermal Regulation V
OUT
/P
D
—0.04— V/WNote 6, Note 7
Thermal Shutdown Die
Temperature
T
SD
— 160 — °C
Output Noise eN — 200 — nV/Hz I
L
= I
OUTMAX
, F = 10 kHz
470 pF from Bypass to GND
Response Time
(from Shutdown Mode)
(Note 8)
T
R
—60—µsV
IN
= 4V, I
L
= 30 mA,
C
IN
= 1 µF, C
OUT
= 10 µF
SHDN
Input
SHDN
Input High
Threshold
V
IH
60 ——%V
IN
V
IN
= 2.5V to 6.0V
SHDN
Input Low
Threshold
V
IL
——15 %V
IN
V
IN
= 2.5V to 6.0V
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
OUT
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: The minimum V
IN
has to meet two conditions: V
IN
= 2.7V and V
IN
= V
R
+ V
DROPOUT
.
2: V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3:
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the Thermal Regulation specification.
5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
MAX
at V
IN
= 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
JA
).
8: Time required for V
OUT
to reach 95% of V
R
(output voltage setting), after V
SHDN
is switched from 0 to V
IN
.
TCV
OUT
V
OUTMAX
V
OUTMIN
–10
6–
V
OUT
T
----------------------------------------------------------------------------
=
Electrical Specifications: Unless otherwise noted, V
DD
= +2.7V to +6.0V and V
SS
= GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges:
Extended Temperature Range T
A
-40 — +125 °C
Operating Temperature Range T
A
-40 — +125 °C
Storage Temperature Range T
A
-65 — +150 °C
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23
JA
—255— °C/W
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

TC2015-5.0VCTTR

Mfr. #:
Buy TC2015-5.0VCTTR
Manufacturer:
Microchip Technology
Description:
LDO Voltage Regulators 100mA LDO w/Shutdown VREF Bypass
Lifecycle:
New from this manufacturer.
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