APT4F120K Datasheet APT4F120K | P1-P3

050-8163 Rev E 8-2011

Absolute Maximum Ratings

Thermal and Mechanical Characteristics

Symbol Parameter Ratings Unit

I

D

Continuous Drain Current @ T

C

= 25°C

4

A

Continuous Drain Current @ T

C

= 100°C 3

I

DM

Pulsed Drain Current

1

15

V

GS

Gate - Source Voltage ±30 V

E

AS

Single Pulse Avalanche Energy

2

310

mJ

I

AR

Avalanche Current, Repetitive or Non-Repetitive

2A

G

D

S

Single die FREDFET

TYPICAL APPLICATIONS

• ZVS phase shifted and other full bridge

• Half bridge

• PFC and other boost converter

• Buck converter

• Single and two switch forward

• Flyback

FEATURES

• Fast switching with low EMI

• Low t

rr

for high reliability

• Ultra low C

rss

for improved noise immunity

• Low gate charge

• Avalanche energy rated

• RoHS compliant

APT4F120K

1200V, 4A, 4.2Ω Max Trr ≤195nS

APT4F120K

Power MOS 8

™

is a high speed, high voltage N-channel switch-mode power MOSFET.

This 'FREDFET' version has a drain-source (body) diode that has been optimized for

high reliability in ZVS phase shifted bridge and other circuits through reduced t

rr

, soft

recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly

reduced ratio of C

rss

/C

iss

result in excellent noise immunity and low switching loss. The

intrinsic gate resistance and capacitance of the poly-silicon gate structure help control

di/dt during switching, resulting in low EMI and reliable paralleling, even when switching

at very high frequency.

N-Channel FREDFET

Symbol Characteristic Min Typ Max Unit

P

D

Total Power Dissipation @ T

C

= 25°C - - 225 W

R



JC

Junction to Case Thermal Resistance - - .56

°C/W

R



CS

Case to Sink Thermal Resistance, Flat, Greased Surface - .11 -

T

J

, T

STG

Operating and Storage Junction Temperature Range -55 - 150

°C

T

L

Soldering Temperature for 10 Seconds (1.6mm from case) - - 300

W

T

Package Weight

- 0.07 - oz

- 1.22 - g

Microsemi Website - http://www.microsemi.com

TO-220

Torque Mounting Torque (TO-220 Package), 4-40 or M3 screw

--10

in·lbf

- - 1.1

N·m

050-8163 Rev E 8-2011

Static Characteristics T

J

= 25°C unless otherwise speciﬁ ed

Source-Drain Diode Characteristics

Dynamic Characteristics T

J

= 25°C unless otherwise speciﬁ ed

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Starting at T

J

= 25°C, L = 155.0mH, R

G

= 25, I

AS

= 2A.

3 Pulse test: Pulse Width < 380s, duty cycle < 2%.

4 C

o(cr)

is deﬁ ned as a ﬁ xed capacitance with the same stored charge as C

OSS

with V

DS

= 67% of V

(BR)DSS

.

5 C

o(er)

is deﬁ ned as a ﬁ xed capacitance with the same stored energy as C

OSS

with V

DS

= 67% of V

(BR)DSS

. To calculate C

o(er)

for any value of

V

DS

less than V

(BR)DSS,

use this equation: C

o(er)

= -8.32E-8/V

DS

^2 + 3.49E-8/V

DS

+ 1.30E-10.

6 R

G

is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

Microsemi reserves the right to change, without notice, the speciﬁ cations and information contained herein.

G

D

S

APT4F120K

Symbol Parameter Test Conditions Min Typ Max Unit

V

BR(DSS)

Drain-Source Breakdown Voltage V

GS

= 0V, I

D

= 250A 1200 V

V

BR(DSS)

/T

J

Breakdown Voltage Temperature Coefﬁ cient

Reference to 25°C, I

D

= 250A

1.41 V/°C

R

DS(on)

Drain-Source On Resistance

3

V

GS

= 10V, I

D

= 2A 3.42 4.2 

V

GS(th)

Gate-Source Threshold Voltage

V

GS

= V

DS

, I

D

= 0.5mA

2.5 4 5 V

V

GS(th)

/T

J

Threshold Voltage Temperature Coefﬁ cient

-10 mV/°C

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 1200V

V

GS

= 0V

T

J

= 25°C 250

A

T

J

= 125°C 1000

I

GSS

Gate-Source Leakage Current

V

GS

= ±30V ±100

nA

Symbol Parameter Test Conditions Min Typ Max Unit

g

fs

Forward Transconductance V

DS

= 50V, I

D

= 2A 4.5

S

C

iss

Input Capacitance

V

GS

= 0V, V

DS

= 25V

f = 1MHz

1385

pF

C

rss

Reverse Transfer Capacitance 17

C

oss

Output Capacitance 100

C

o(cr)

4

Effective Output Capacitance, Charge Related

V

GS

= 0V, V

DS

= 0V to 800V

40

C

o(er)

5

Effective Output Capacitance, Energy Related 20

Q

g

Total Gate Charge

V

GS

= 0 to 10V, I

D

= 2A,

V

DS

= 600V

43

nC

Q

gs

Gate-Source Charge

7

Q

gd

Gate-Drain Charge

20

t

d(on)

Turn-On Delay Time

Resistive Switching

V

DD

= 800V, I

D

= 2A

R

G

= 10

6

, V

GG

= 15V

7.4

ns

t

r

Current Rise Time 4.4

t

d(off)

Turn-Off Delay Time 24

t

f

Current Fall Time 6.9

Symbol Parameter Test Conditions Min Typ Max Unit

I

S

Continuous Source Current

(Body Diode)

4

A

I

SM

Pulsed Source Current

(Body Diode)

1

15

V

SD

Diode Forward Voltage I

SD

= 2A, T

J

= 25°C, V

GS

= 0V 0.8 1.3 V

t

rr

Reverse Recovery Time

I

SD

= 2A

3

,

di

SD

/dt = 100A/s,

V

DD

= 100V

T

J

= 25°C

170 195

nS

T

J

= 125°C

330 400

Q

rr

Reverse Recovery Charge

T

J

= 25°C

.370

C

T

J

= 125°C

.820

I

rrm

Reverse Recovery Current

T

J

= 25°C

4.90

A

T

J

= 125°C

5.40

dv/dt Peak Recovery dv/dt

I

SD

 2A, di/dt1000As, V

DD

= 800V,

T

J

= 125°C

20 V/ns

MOSFET symbol

showing the integral

reverse p-n junction

diode (body diode)

050-8163 Rev E 8-2011

0

2

4

6

8

10

12

14

16

0 10 20 30 40 50 60

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0 5 10 15 20 25 30

0

2

4

6

8

10

0 5 10 15 20 25 30

V

GS

= 6, 7, 8 & 9V

V

GS

= 10V

5V

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

T

J

= 125°C

T

J

= 150°C

I

D

= 2A

V

DS

= 960V

V

DS

= 240V

V

DS

= 600V

APT4F120K

4.5V

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

DS

> I

D(ON)

x R

DS(ON)

MAX.

250SEC. PULSE TEST

@ <0.5 % DUTY CYCLE

NORMALIZED TO

V

GS

= 10V @ 2A

C

oss

C

iss

T

J

= 150°C

T

J

= 25°C

C

rss

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

GS

, GATE-TO-SOURCE VOLTAGE (V) g

fs

, TRANSCONDUCTANCE R

DS(ON)

, DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (A)

I

SD,

REVERSE DRAIN CURRENT (A) C, CAPACITANCE (pF) I

D

, DRAIN CURRENT (A) I

D

, DRIAN CURRENT (A)

V

DS(ON)

, DRAIN-TO-SOURCE VOLTAGE (V) V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 1, Output Characteristics Figure 2, Output Characteristics

T

J

, JUNCTION TEMPERATURE (°C) V

GS

, GATE-TO-SOURCE VOLTAGE (V)

Figure 3, R

DS(ON)

vs Junction Temperature Figure 4, Transfer Characteristics

I

D

, DRAIN CURRENT (A) V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-Source Voltage

Q

g

, TOTAL GATE CHARGE (nC) V

SD

, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 7, Gate Charge vs Gate-to-Source Voltage Figure 8, Reverse Drain Current vs Source-to-Drain Voltage

-55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8

0 0.5 1.0 1.5 2.0 0 200 400 600 800 1000 1200

0 0.2 0.4 0.6 0.8 1.0 1.2

3.0

2.5

2.0

1.5

1.0

0.5

0

5

4

3

2

1

0

16

14

12

10

8

6

4

2

0

2,000

1,000

100

10

1

16

14

12

10

8

6

4

2

0

APT4F120K

APT4F120K

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