APT4F120K

050-8163 Rev E 8-2011
0
0.10
0.20
0.30
0.40
0.50
0.60
10
-5
10
-4
10
-3
10
-2
10 1.0
-1
e3 100% Sn Plated
TO-220 (K) Package Outline
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
t
1
= Pulse Duration
Z
JC
, THERMAL IMPEDANCE (°C/W)
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
APT4F120K
1ms
100ms
R
ds(on)
Scaling for Different Case & Junction
Temperatures:
I
D
= I
D(T
C
= 25
°
C)
*(T
J
- T
C
)/125
DC line
100s
I
DM
10ms
13s
100s
I
DM
100ms
10ms
13s
R
ds(on)
DC line
T
J
= 150°C
T
C
= 25°C
1ms
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V) V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area Figure 10, Maximum Forward Safe Operating Area
I
D
, DRAIN CURRENT (A)
1 10 100 1200 1 10 100 1200
20
10
1
0.1
20
10
1
0.1
T
J
= 125°C
T
C
= 75°C
Source
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
4.82 (.190)
3.56 (.140)
1.39 (.055)
0.51 (.020)
4.08 (.161) Dia .
3.54 (.139)
Dimensions in Millimeters and (Inches)
Gate
Drai n
6.85 (.270)
5.85 (.230)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.92 (.115)
2.04 (.080)
3.42 (.135)
2.54 (.100)
0.50 (.020)
0.41 (.016)
5.33 (.210)
4.83 (.190)
Drai n
3.683 (.145)
MAX.
16.25 (.639)
14.23 (.560)

APT4F120K

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
MOSFET FG, FREDFET, 1200V, TO-220
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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