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VND5004CSP30TR-E

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DocID027938 Rev 3 7/28
VND5004CSP30 Electrical specifications
27
2 Electrical specifications
Figure 3. Current and voltage conventions
2.1 Absolute maximum ratings
Stressing the device above the ratings listed in Table 3 may cause permanent damage to
the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to the conditions in this section for extended periods may affect device reliability.
,
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Table 3. Absolute maximum ratings
Symbol Parameter Value Unit
V
CC
DC supply voltage 27 V
V
CCPK
Transient supply voltage (T < 400 msR
load
> 0.5 ȍ 41 V
-V
CC
Reverse DC supply voltage 16 V
I
OUT
DC output current Internally limited A
-I
OUT
Reverse DC output current 70 A
I
IN
DC input current -1 to 10 mA
I
CSD
DC current sense disable input current -1 to 10 mA
V
CSENSE
Current sense maximum voltage (V
CC
> 0 V)
Vcc-41
+Vcc
V
V
E
MAX
Maximum switching energy (single pulse)
(L = 0.3 mH; R
L
= 0 ȍ; V
bat
= 13.5 V; T
jstart
= 150 °C;
I
OUT
= I
limL
(typ.))
342 mJ
V
ESD
Electrostatic discharge (Human Body Model: R = 1.5 kȍ
C = 100 pF)
2000 V
V
ESD
Charge device model (CDM-AEC-Q100-011) 750 V
Electrical specifications VND5004CSP30
8/28 DocID027938 Rev 3
2.2 Thermal data
T
j
Junction operating temperature -40 to 150 °C
T
STG
Storage temperature -55 to 150 °C
Table 3. Absolute maximum ratings (continued)
Symbol Parameter Value Unit
Table 4. Thermal data
Symbol Parameter Max value Unit
R
thj-case
Thermal resistance junction-case (with one channel ON) 0.35 °C/W
R
thj-amb
Thermal resistance junction-ambient 58
(1)
1. PCB FR4 area 58 mmX58 mm, PCB thickness 2 mm, Cu thickness 35 Pm, minimum pad layout.
°C/W
DocID027938 Rev 3 9/28
VND5004CSP30 Electrical specifications
27
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
CC
< 24 V, -40 °C < T
j
< 150 °C, unless
otherwise stated.
Table 5. Power section
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
Operating supply
voltage
4.5 13 27 V
V
USD
Undervoltage shutdown 3.5 4.5 V
V
USDhyst
Undervoltage shut-down
hysteresis
0.5 V
R
ON
On-state resistance
(1)
1. For each channel.
I
OUT
= 15 A; T
j
= 25 °C 4 mȍ
I
OUT
= 15 A; T
j
= 150 °C 8 mȍ
I
OUT
= 15 A; V
CC
= 5 V; T
j
= 25 °C 6 mȍ
R
ON REV
R
dson
in reverse battery
condition
V
CC
=-13V; I
OUT
=-15A; T
j
=25°C 4 mȍ
V
clamp
V
CC
clamp voltage I
CC
=20 mA; I
OUT1,2
=0A 41 46 52 V
I
S
Supply current
Off state; V
CC
= 13 V; T
j
= 25 °C;
V
IN
= V
OUT
= V
SENSE
= V
CSD
= 0 V
2
(2)
2. PowerMOS leakage included.
5
(2)
μA
On state; V
CC
= 13 V; V
IN
= 5 V;
I
OUT
= 0 A
3.5 6 mA
I
L(off)
Off-state output
current
(1)
V
IN
= V
OUT
= 0 V; V
CC
= 13 V;
T
j
= 25 °C
00.013 μA
V
IN
= V
OUT
= 0 V; V
CC
= 13 V;
T
j
= 125 °C
05μA
Table 6. Switching (V
CC
= 13 V; T
j
= 25 °C)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time R
L
= 0.87 ȍ (see Figure 5)— 25 — μs
t
d(off)
Turn-on delay time R
L
= 0.87 ȍ (see Figure 5)— 35 — μs
(dV
OUT
/dt)
on
Turn-on voltage slope R
L
= 0.87 ȍ —
See
Figure 16
—Vμs
(dV
OUT
/dt)
off
Turn-off voltage slope R
L
= 0.87 ȍ —
See
Figure 16
—Vμs
W
ON
Switching energy
losses during t
won
R
L
= 0.87 ȍ (see Figure 5)— 5.4 —mJ
W
OFF
Switching energy
losses during t
woff
R
L
= 0.87 ȍ (see Figure 5)— 2.3 —mJ
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VND5004CSP30TR-E

Mfr. #:
Buy VND5004CSP30TR-E
Manufacturer:
STMicroelectronics
Description:
Power Switch ICs - Power Distribution
Lifecycle:
New from this manufacturer.
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