IXTA3N100D2 Datasheet IXTA3N100D2, IXTP3N100D2 | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSX

T

J

= 25C to 150C 1000 V

V

GSX

Continuous 20 V

V

GSM

Transient 30 V

P

D

T

C

= 25C 125 W

T

J

- 55 ... +150 C

T

JM

150 C

T

stg

- 55 ... +150 C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

DS100184E(4/17)

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSX

V

GS

= - 5V, I

D

= 250A 1000 V

V

GS(off)

V

DS

= 25V, I

D

= 250A - 2.5 - 4.5 V

I

GSX

V

GS

= 20V, V

DS

= 0V 100 nA

I

DSX(off)

V

DS

= V

DSX

, V

GS

= - 5V 5 A

T

J

= 125C 50A

R

DS(on)

V

GS

= 0V, I

D

= 1.5A, Note 1 6 

I

D(on)

V

GS

= 0V, V

DS

= 50V, Note 1 3 A

IXTA3N100D2

IXTP3N100D2

V

DSX

= 1000V

I

D(on)

> 3A

R

DS(on)



 6





Features

• Normally ON Mode

• International Standard Packages

• Molding Epoxies Meet UL 94 V-0

Flammability Classification

Advantages

• Easy to Mount

• Space Savings

• High Power Density

Applications

• Audio Amplifiers

• Start-Up Circuits

• Protection Circuits

• Ramp Generators

• Current Regulators

• Active Loads

Depletion Mode

MOSFET

N-Channel

G = Gate D = Drain

S = Source Tab = Drain

TO-263 AA (IXTA)

G

D

S

TO-220AB (IXTP)

D (Tab)

G

S

D (Tab)

G

D

S

IXTA3N100D2

IXTP3N100D2

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 30V, I

D

= 1.5A, Note 1 1.2 2.0 S

C

iss

1020 pF

C

oss

V

GS

= -10V, V

DS

= 25V, f = 1MHz 68 pF

C

rss

17 pF

t

d(on)

27 ns

t

r

67 ns

t

d(off)

34 ns

t

f

40 ns

Q

g(on)

37.5 nC

Q

gs

V

GS

= 5V, V

DS

= 500V, I

D

= 1.5A 4.4 nC

Q

gd

21.2 nC

R

thJC

1.0 C/W

R

thCS

TO-220 0.50 C/W

Safe-Operating-Area Specification

Characteristic Values

Symbol Test Conditions Min. Typ. Max.

SOA V

DS

= 800V, I

D

= 94mA, T

C

= 75C, Tp = 5s 75 W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

V

SD

I

F

= 3A, V

GS

= -10V, Note 1 0.8 1.3 V

t

rr

970 ns

I

RM

12.7 A

Q

RM

6.16 μC

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t  300s, duty cycle, d  2%.

Resistive Switching Times

V

GS

=  5V, V

DS

= 500V, I

D

= 1.5A

R

G

= 3.3 (External)

I

F

= 3A, -di/dt = 100A/s

V

R

= 100V, V

GS

= -10V

TO-220 Outline

Pins: 1 - Gate 2 - Drain

3 - Source

TO-263 Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190

b 0.51 0.99 .020 .039

b2 1.14 1.40 .045 .055

c 0.40 0.74 .016 .029

c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380

D1 8.00 8.89 .280 .320

E 9.65 10.41 .380 .405

E1 6.22 8.13 .270 .320

e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625

L1 2.29 2.79 .090 .110

L2 1.02 1.40 .040 .055

L3 1.27 1.78 .050 .070

L4 0 0.13 0 .005

1. Gate

2. Drain

3. Source

4. Drain

Bottom

Side

IXTA3N100D2

IXTP3N100D2

Fig. 1. Output Characteristics @ T

J

= 25

o

C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0 2 4 6 8 10 12 14

V

DS

- Volts

I

D

- Amperes

V

GS

= 5V

2V

1V

- 2V

0V

- 3V

-1V

Fig. 2. Extended Output Characteristics @ T

J

= 25

o

C

0

1

2

3

4

5

6

7

0 1020304050

V

DS

- Volts

I

D

- Amperes

V

GS

= 5V

2V

1V

- 2V

-1V

0V

Fig. 3. Output Characteristics @ T

J

= 125

o

C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 5V

1V

0V

-1V

- 2V

- 3V

Fig. 4. Drain Current @ T

J

= 25

o

C

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

0 100 200 300 400 500 600 700 800 900 1000 1100 1200

V

DS

- Volts

I

D

- Amperes

V

GS

= - 3.00V

- 3.75V

- 3.25V

- 3.50V

- 4.00V

- 4.25V

- 4.50V

Fig. 5. Drain Current @ T

J

= 100

o

C

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

0 100 200 300 400 500 600 700 800 900 1000 1100 1200

V

DS

- Volts

I

D

- Amperes

V

GS

= - 3.25V

- 3.50V

- 3.75V

- 4.50V

- 4.00V

- 4.25V

Fig. 6. Dynamic Resistance vs. Gate Voltage

1.E+04

1.E+05

1.E+06

1.E+07

1.E+08

1.E+09

1.E+10

-4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8

V

GS

- Volts

R

O

- Ohms

∆

V

DS

= 700V - 100V

T

J

= 25

o

C

T

J

= 100

o

C

IXTA3N100D2

IXTA3N100D2

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