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IXTA3N100D2

P1-P3P4-P5
IXTA3N100D2
IXTP3N100D2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Normalized R
DS(on)
vs. Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
-50-25 0 255075100125150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 0V
I
D
= 1.5A
Fig. 8. R
DS(on)
Normalized to I
D
= 1.5A Value
vs. Drain Current
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 0V
5V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 9. Input Admittance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
V
DS
= 30V
Fig. 10. Transconductance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
V
DS
= 30V
25
o
C
125
o
C
Fig. 12. Forward Voltage Drop of Intrinsic Diode
0
1
2
3
4
5
6
7
8
9
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
V
GS
= -10V
T
J
= 25
o
C
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
0.8
0.9
1.0
1.1
1.2
1.3
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
BV / V
GS(off)
- Normalized
V
GS(off)
@ V
DS
= 25V
BV
DSX
@ V
GS
= - 5V
© 2017 IXYS CORPORATION, All Rights Reserved
IXTA3N100D2
IXTP3N100D2
IXYS REF: T_3N100D2(3C) 7-15-14-B
Fig. 17. Maximum Transient Thermal Impedance
0.01
0.10
1.00
10.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 17. Maximum Transient Thermal Impedance
.
2.00
Fig. 14. Gate Charge
-5
-4
-3
-2
-1
0
1
2
3
4
5
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 1.5A
I
G
= 10mA
Fig. 13. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 15. Forward-Bias Safe Operating Area
@ T
C
= 25
o
C
0.01
0.10
1.00
10.00
10 100 1,000
V
DS
- Volts
I
D
- Amperes
25μs
1ms
100μs
R
DS(on)
Limit
10ms
100ms
DC
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
Fig. 16. Forward-Bias Safe Operating Area
@ T
C
= 75
o
C
0.01
0.1
1
10
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 75
o
C
Single Pulse
25μs
1ms
100μs
R
DS(on)
Limit
10ms
100ms
DC
P1-P3P4-P5

IXTA3N100D2

Mfr. #:
Buy IXTA3N100D2
Manufacturer:
Littelfuse
Description:
MOSFET N-CH MOSFETS (D2) 1000V 3A
Lifecycle:
New from this manufacturer.
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