MMDT3946-7-F Datasheet MMDT3946-7-F, MMDT3946-7 | P1-P3

MMDT3946

40V COMPLEMENTARY NPN-PNP SMALL SIGNAL TRANSISTOR IN SOT363

Features

• Complementary Pair One 3904-Type NPN

One 3906-Type PNP

• Ultra-Small Surface Mount Package

• Epitaxial Planar Die Construction

• Ideal for Low Power Amplification and Switching

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish  Matte Tin Finish. Solderable per

MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Ordering Information (Note 4)

Product

Compliance

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

MMDT3946-7-F

AEC-Q101

K46

7

8

3,000

MMDT3946-7R-F

AEC-Q101

K46

7

8

3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2010

2011

2012

2013

2014

2015

2016

2017

Code

X

Y

Z

A

B

C

D

E

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Device Schematic and Pinout

Top View

K46 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: A = 2013)

M

= Month (ex: 9 = September)

Top View

SOT363

K46

YM

C2 B1 E1

E2 B2 C1

E1, B1, C1 = PNP 3906

E2, B2, C2 = NPN 3904

e3

MMDT3946

Datasheet Number DS30123 Rev.12 - 2

1 of 8

www.diodes.com

July 2014

MMDT3946

Absolute Maximum Ratings, NPN 3904 (@T

A

= +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

60

V

Collector-Emitter Voltage

V

CEO

40

V

Emitter-Base Voltage

V

EBO

6.0

V

Collector Current

I

C

200

mA

Absolute Maximum Ratings, PNP 3906 (@T

A

= +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-40

V

Collector-Emitter Voltage

V

CEO

-40

V

Emitter-Base Voltage

V

EBO

-5.0

V

Collector Current

I

C

-200

mA

Thermal Characteristics, Total Device (@T

A

= +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

P

D

200

mW

Thermal Resistance, Junction to Ambient Air (Note 5)

R

θ

JA

625

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Notes: 5. For a device mounted on minimum recommended pad layout that is on a single-sided 0.6mm FR4 PCB; device is measured under still air

conditions whilst operating in a steady-state.

0

50

25 50

75

100 125

150

175

200

P , PO

WER DISSIPATI

ON (mW)

D

T , AMBIENT TEMPERATURE (°C)

Fig. 1, Power Dissipation vs.

Ambient Temperature (Total Device)

A

100

150

200

0

MMDT3946

Datasheet Number DS30123 Rev.12 - 2

2 of 8

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July 2014

MMDT3946

Electrical Characteristics, NPN 3904 (@T

A

= +25°C unless otherwise specified.)

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Collector-Base Breakdown Voltage

BV

CBO

60



V

I

C

= 10µA, I

E

= 0

Collector-Emitter Breakdown Voltage

BV

CEO

40



V

I

C

= 1.0mA, I

B

= 0

Emitter-Base Breakdown Voltage

BV

EBO

5.0

6.0

V

I

E

= 10µA, I

C

= 0

Collector Cutoff Current

I

CEX



50

nA

V

CE

= 30V, V

EB(OFF)

= 3.0V

Base Cutoff Current

I

BL



50 nA

V

CE

= 30V, V

EB(OFF)

= 3.0V

ON CHARACTERISTICS (Note 6)

Static Forward Current Transfer Ratio

h

FE

40

70

100

60

30



300



I

C

= 100µA, V

CE

= 1.0V

I

C

= 1.0mA, V

CE

= 1.0V

I

C

= 10mA, V

CE

= 1.0V

I

C

= 50mA, V

CE

= 1.0V

I

C

= 100mA, V

CE

= 1.0V

Collector-Emitter Saturation Voltage

V

CE(SAT)



0.20

0.30

V

I

C

= 10mA, I

B

= 1.0mA

I

C

= 50mA, I

B

= 5.0mA

Base-Emitter Saturation Voltage

V

BE(SAT)

0.65



0.85

0.95

V

I

C

= 10mA, I

B

= 1.0mA

I

C

= 50mA, I

B

= 5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

obo



4.0 pF

V

CB

= 5.0V, f = 1.0MHz, I

E

= 0

Input Capacitance

C

ibo



8.0

pF

V

EB

= 0.5V, f = 1.0MHz, I

C

= 0

Input Impedance

h

ie

1.0 10 kΩ

V

CE

= 10V, I

C

= 1.0mA,

f = 1.0kHz

Voltage Feedback Ratio

h

re

0.5 8.0 x 10

-4

Small Signal Current Gain

h

fe

100

400



Output Admittance

h

oe

1.0

40

µ

S

Current Gain-Bandwidth Product

f

T

300



MHz

V

CE

= 20V, I

C

= 20mA,

f = 100MHz

Noise Figure NF



5.0 dB

V

CE

= 5.0V, I

C

= 100µA,

R

S

= 1.0kΩ,

f = 1.0kHz

SWITCHING CHARACTERISTICS

Delay Time

t

d



35 ns

V

CC

= 3.0V, I

C

= 10mA,

V

BE(off)

= - 0.5V, I

B1

= 1.0mA

Rise Time

t

r



35 ns

Storage Time

t

s



200 ns

V

CC

= 3.0V, I

C

= 10mA,

I

B1

= I

B2

= 1.0mA

Fall Time

t

f



50 ns

Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

MMDT3946

Datasheet Number DS30123 Rev.12 - 2

3 of 8

www.diodes.com

July 2014

MMDT3946-7-F

MMDT3946-7-F

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