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MMDT3946-7-F

P1-P3P4-P6P7-P8
MMDT3946
Typical Electrical Characteristics, NPN 3904 (@T
A
= +25°C unless otherwise specified.)
0
5
15
10
0.1
1
10 100
C , INPUT CAPACITANCE (pF)
C , OUTPUT CAPACITANCE (pF)
IBO
OBO
V , COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage (NPN-3904)
CB
1
10
1,000
100
0.1
1
10
1,000
100
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs.
Collector Current (NPN-3904)
C
0.01
0.1
1
0.1 1 10
100
1,000
V ,
COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current (NPN-3904)
C
0.1
1
10
0.1 1 10 100 1,000
V ,
BA
SE-
EMI
TTE
R
SATU
RATI
ON VO
LTAGE
(V)
B
E(S
AT)
I , COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current (NPN-3904)
C
MMDT3946
Datasheet Number DS30123 Rev.12 - 2
4 of 8
www.diodes.com
July 2014
© Diodes Incorporated
MMDT3946
Electrical Characteristics, PNP 3906 (@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
BV
CBO
-40
V
I
C
= -10µA, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
-40
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-5.0
V
I
E
= -10µA, I
C
= 0
Collector Cutoff Current
I
CEX
-50
nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
Base Cutoff Current
I
BL
-50 nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
ON CHARACTERISTICS (Note 6)
Static Forward Current Transfer Ratio
h
FE
60
80
100
60
30
300
I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.25
-0.40
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
-0.65
-0.85
-0.95
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
4.5 pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
10
pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
2.0 12 kΩ
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.1 10 x 10
-4
Small Signal Current Gain
h
fe
100
400
Output Admittance
h
oe
3.0
60
µ
S
Current Gain-Bandwidth Product
f
T
250
MHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
Noise Figure NF
4.0 dB
V
CE
= -5.0V, I
C
= -100µA,
R
S
= 1.0kΩ,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
35 ns
V
CC
= -3.0V, I
C
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
Rise Time
t
r
35
ns
Storage Time
t
s
225 ns
V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA
Fall Time
t
f
75 ns
MMDT3946
Datasheet Number DS30123 Rev.12 - 2
5 of 8
www.diodes.com
July 2014
© Diodes Incorporated
MMDT3946
Typical Electrical Characteristics, PNP 3906 (@T
A
= +25°C unless otherwise specified.)
1
100
10
0.1
1
10 100
C , INPUT CAPACITANCE (pF)
C , OUTPUT CAPACITANCE (pF)
IBO
OBO
V , COLLECTOR-BASE VOLTAGE (V)
Fig. 6, Input and Output Capacitance vs.
Collector-Base Voltage (PNP-3906)
CB
1
10
1,000
100
0.1
1
10
1,000
100
h ,
D
C
C
UR
R
EN
T GAIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 7, Typical DC Current Gain vs.
Collector Current (PNP-3906)
C
0.01
0.1
10
1
1
10
100
1,000
V , COLLECTOR-EMITTER
S
ATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 8, Typical Collector-Emitter Saturation Voltage
vs. Collector Current (PNP-3906)
C
0.5
0.6
0.7
0.8
0.9
1.0
1 10 100
V ,
B
ASE-
EMI
TTE
R
SATURATION VOLTAGE (V)
BE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 9, Typical Base-Emitter
Saturation Voltage vs. Collector Current (PNP-3906)
C
I
I
C
B
= 10
MMDT3946
Datasheet Number DS30123 Rev.12 - 2
6 of 8
www.diodes.com
July 2014
© Diodes Incorporated
P1-P3P4-P6P7-P8

MMDT3946-7-F

Mfr. #:
Buy MMDT3946-7-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 40 / 40V 200mW
Lifecycle:
New from this manufacturer.
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