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DD180N16SHPSA1

P1-P3P4-P6P7-P9P10-P10
Netz-Dioden-Modul
Rectifier Diode Module
Technische Information /
technical information
DD180N16S
Date of Publication 2017-08-24
Revision 3.3
1/10
Seite/page
V
RRM
1600V
I
FAVM
226A (T
C
= 85°C)
I
FSM
5750A
V
T0
0,85V
r
T
0,95mΩ
R
thJC
0,14K/W
Base plate
34mm
Weight
165g
For type designation please refer to actual
short form catalog
http://www.ifbip.com/catalog
Features
Solder-Bond Technology
Industrial standard package
Electrically insulated base plate
Typical Applications
Rectifier for drives applications
Rectifiers for UPS
Battery chargers
content of customer DMX code
DMX code
DMX code
digit
digit quantity
type designation
1..18
18
serial number
19..23
5
internal production order number
24..31
8
material number
32..41
10
date code (YY/WW)
42..45
4
add on for date code
46
1
1 2 3
www.ifbip.com
support@infineon-bip.com
Netz-Dioden-Modul
Rectifier Diode Module
Technische Information /
technical information
DD180N16S
Date of Publication 2017-08-24
Revision 3.3
2/10
Seite/page
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
T
vj
= -40°C... T
vj max
V
RRM
1600
V
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
T
vj
= +25°C... T
vj max
V
RSM
1700
V
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
I
FRMSM
275
A
Dauergrenzstrom
average on-state current
T
C
= 85°C
T
C
= 100°C
I
FAVM
226
174
A
A
Stoßstrom-Grenzwert
surge current
T
vj
= 25°C, t
P
= 10ms
T
vj
= T
vj max
, t
P
= 10ms
I
FSM
5750
5000
A
A
Grenzlastintegral
I²t-value
T
vj
= 25°C, t
P
= 10ms
T
vj
= T
vj max
, t
P
= 10ms
I²t
165313
125000
A²s
A²s
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
T
vj
= T
vj max
, i
F
= 500A
v
F
max.
1,39
V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
max.
0,85
V
Ersatzwiderstand
slope resistance
T
vj
= T
vj max
r
T
max.
0,95
mΩ
Sperrstrom
reverse current
T
vj
= T
vj max
, v
R
= V
RRM
i
R
max.
1
mA
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50Hz, t = 1 sec
RMS, f = 50Hz, t = 1 min
V
ISOL
3,6
3
kV
kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Modul / per Module, Θ = 180° sin
pro Zweig / per arm, Θ = 180° sin
pro Modul / per Module, DC
pro Zweig / per arm, DC
R
thJC
max.
max.
max.
max.
0,08
0,16
0,07
0,14
K/W
K/W
K/W
K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per Module
pro Zweig / per arm
R
thCH
max.
max.
0,04
0,08
K/W
K/W
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
T
vj max
135
°C
Betriebstemperatur
operating temperature
T
c op
- 40...+135
°C
Lagertemperatur
storage temperature
T
stg
- 40...+135
°C
prepared by:
AG
date of publication:
2017-08-24
approved by:
MS
revision:
3.3
Netz-Dioden-Modul
Rectifier Diode Module
Technische Information /
technical information
DD180N16S
Date of Publication 2017-08-24
Revision 3.3
3/10
Seite/page
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see annex
Seite 4
page 4
Innere Isolation
internal insulation
Basisisolierung (Schutzklasse 1, EN 61140)
Basic insulation (class 1, IEC 61140)
Al
2
O
3
Anzugsdrehmoment für mechanische Anschlüsse
mounting torque
Toleranz ±15%
M1
5
Nm
Anzugsdrehmoment für elektrische Anschlüsse
terminal connection torque
Toleranz ±10%
M2
5
Nm
Gewicht
weight
G
typ.
165
g
Kriechstrecke
creepage distance
10
mm
Schwingfestigkeit
vibration resistance
f = 50Hz
50
m/s²
file-No.
E 83335
P1-P3P4-P6P7-P9P10-P10

DD180N16SHPSA1

Mfr. #:
Buy DD180N16SHPSA1
Manufacturer:
Infineon Technologies
Description:
Discrete Semiconductor Modules Solder Contact Modules
Lifecycle:
New from this manufacturer.
Delivery:
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