PESD3V3X1BL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 January 2009 6 of 11
NXP Semiconductors
PESD3V3X1BL
Ultra low capacitance bidirectional ESD protection diode
7. Application information
The PESD3V3X1BL is designed for the protection of one bidirectional data or signal line
from the damage caused by ESD. The device may be used on lines where the signal
polarities are both, positive and negative with respect to ground.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
Fig 5. Application diagram
006aab250
DUT
GND
line to be protected
