September 2013 Rev 6 1/14
14
SMA661AS
Fully integrated GPS LNA IC
Features
■
Power down function
■
Integrated matching networks
■
Low noise figure 1.15 dB @ 1.575 GHz
■
High gain 18 dB @ 1.575 GHz
■
High linearity (IIP3 = +3 dBm)
■
Temperature compensated
■
Unconditionally stable
■
ESD protection (HBM ± 2 kV)
■
70 GHz Silicon Germanium technology
Applications
■
GPS
Description
The SMA661AS is the first low-noise amplifier
with integrated matching networks and embedded
power-down function. The chip, which requires
only one external input capacitor, drastically
reduces the application bill of materials and the
PCB area, resulting in an ideal solution for
compact and cost-effective GPS LNA.
The SMA661AS, using the ST's leading-edge
70 GHz SiGe BiCMOS technology, achieves
excellent RF performance at the GPS frequency of
1.575 GHz, in terms of power gain, noise Figure
and linearity with a current consumption of
8.5 mA.
The device is unconditionally stable and ESD
protected. All these features are steady over the
operating temperature range of -40
o
C to +85
o
C.
It's housed in ultra-miniature SOT666 plastic
package.
SOT666
(1.65 x 1.2 x 0.57 mm)
Table 1. Device summary
Order code Marking Package Packing
SMA661ASTR 661 SOT666 Tape and reel
www.st.com
