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STPS2L25UF

P1-P3P4-P6P7-P9
February 2007 Rev 5 1/9
9
STPS2L25
Low drop power Schottky rectifier
Main product characteristics
Features and benefits
■ Very low forward voltage drop for less power
dissipation
■ Optimized conduction/reverse losses trade-off
which means the highest efficiency in the
applications
■ Avalanche capability specified
Description
Single Schottky rectifier suited to switched mode
power supplies and high frequency DC to DC
converters.
Packaged in SMB, SMB flat for thermal resistance
characteristic improvement, this device is
especially intended for use in parallel with
MOSFETs in synchronous rectification.
I
F(AV)
2 A
V
RRM
25 V
T
j
(max) 150° C
V
F
(max) 0.375 V
K
A
SMB
STPS2L25U
SMB flat
STPS2L25UF
K
A
Table 1. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 25 V
I
F(AV)
Average forward current
SMB T
L
= 125° C δ = 0.5
2A
SMB flat T
L
= 135° C δ = 0.5
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 75 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs Tj = 25° C 1500 W
T
stg
Storage temperature range -65 to + 150 °C
T
j
Operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
d
Ptot
dTj
-
--------------
1
Rth j a–()
--------------------------
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Characteristics STPS2L25
2/9
1 Characteristics
To evaluate the maximum conduction losses, use the following equation:
P = 0.24 x I
F(AV)
+ 0.068 I
F
2
(RMS)
Table 2. Thermal resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
SMB 25
°C/W
SMB flat 15
Table 3. Static electrical characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
90 µA
T
j
= 125° C
15 30 mA
V
F
(1)
Forward voltage drop
T
j
= 25° C
I
F
= 2 A
0.45
V
T
j
= 125° C
0.325 0.375
T
j
= 25° C
I
F
= 4 A
0.53
T
j
= 125° C
0.43 0.51
1. Pulse test: tp = 380 µs, δ < 2%
STPS2L25 Characteristics
3/9
Figure 1. Average forward power dissipation
versus average forward current
Figure 2. Average forward current versus
ambient temperature (δ = 0.5) SMB
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
P (W)
F(AV)
T
δ
=tp/T
tp
I (A)
F(AV)
δ = 1
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0 25 50 75 100 125 150
I (A)
F(AV)
T (°C)
amb
R =100°C/W
th(j-a)
R=R
th(j-a) th(j-l)
SMB
T
δ
=tp/T
tp
Figure 3. Average forward current
versus ambient temperature
(δ = 0.5) SMB flat
Figure 4. Non repetitive surge peak forward
current versus overload duration
(maximum values) SMB
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0 25 50 75 100 125 150
I (A)
F(AV)
T (°C)
amb
R =100°C/W
th(j-a)
R=R
th(j-a) th(j-l)
SMB flat
T
δ
=tp/T
tp
0
1
2
3
4
5
6
7
8
9
10
1.E-03 1.E-02 1.E-01 1.E+00
IM
t
δ=0.5
I (A)
M
t(s)
T =25°C
a
T =75°C
a
T =125°C
a
SMB
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values) SMB flat
Figure 6. Normalized avalanche power
derating versus pulse duration
0
5
10
15
20
25
30
1.E-03 1.E-02 1.E-01 1.E+00
IM
t
δ=0.5
I (A)
M
t(s)
T =25°C
L
T =75°C
L
T =125°C
L
SMB flat
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
P1-P3P4-P6P7-P9

STPS2L25UF

Mfr. #:
Buy STPS2L25UF
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers Lo drop Pwr Schottky rectifier
Lifecycle:
New from this manufacturer.
Delivery:
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