Characteristics STPS2L25
4/9
Figure 7. Normalized avalanche power
derating versus junction
temperature
Figure 8. Relative variation of thermal
impedance junction to ambient
versus pulse duration - SMB
0
0.2
0.4
0.6
0.8
1
1.2
25 50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z/R
th(j-a) th(j-a)
T
δ
=tp/T
tp
t (s)
p
Single pulse
SMB
Figure 9. Relative variation of thermal
impedance junction to lead
versus pulse duration - SMB flat
Figure 10. Reverse leakage current versus
reverse voltage applied (typical
values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z/R
th(j-l) th(j-l)
t (s)
p
Single pulse
SMB flat
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 5 10 15 20 25
I (mA)
R
V (V)
R
T =125°C
j
T =150°C
j
T =100°C
j
T =25°C
j
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
Figure 12. Forward voltage drop versus
forward current (typical values)
10
100
1000
1 10 100
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
0.1
1.0
10.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6
I (A)
FM
V (V)
FM
T =25°C
j
T =125°C
j
T =150°C
j
